complex, 31, 47, 134, 179
grading, 141, 165
Refrigerant, 375
Relaxation time, 179
Resistance, 310
Reversible hydrogen electrode, 387
Reynolds number, 440
Reynolds, D. C., 151
Root-mean-square roughness, 413
Sandia National Laboratories, 335
Satellite, 151
Saussure, Horace-Bénédict de, 149
Sawing, 160
Schottky barrier, 83, 103–104
Schottky, Walter, 103
Screen printing, 168, 220–221
Second law of thermodynamics, 125, 235
Selenium, 177, 199
Selenization, 202
Semiconductor, 22
n-type, 55
p-type, 56
capture cross section, 73
defect density, 201
depletion approximation, 87
depletion region, 84, 87, 95, 97, 99, 403, 406
width, 91, 100, 103
diffusion, 47, 59, 84, 93, 403
grading, 141, 165
Refrigerant, 375
Relaxation time, 179
Resistance, 310
Reversible hydrogen electrode, 387
Reynolds number, 440
Reynolds, D. C., 151
Root-mean-square roughness, 413
Sandia National Laboratories, 335
Satellite, 151
Saussure, Horace-Bénédict de, 149
Sawing, 160
Schottky barrier, 83, 103–104
Schottky, Walter, 103
Screen printing, 168, 220–221
Second law of thermodynamics, 125, 235
Selenium, 177, 199
Selenization, 202
Semiconductor, 22
n-type, 55
p-type, 56
capture cross section, 73
defect density, 201
depletion approximation, 87
depletion region, 84, 87, 95, 97, 99, 403, 406
width, 91, 100, 103
diffusion, 47, 59, 84, 93, 403
