(a)
(b)
(c)
= 0 the minority carrier concentration is zero. At x = W the surface recombination velocity is S.
Find an expression for the excess minority–carrier concentration for the case of infinite minority–carrier
lifetime in the silicon and S = 0.
Find an expression for the excess minority–carrier concentration for the case of infinite minority carrier
lifetime in the silicon and S > 0.
Sketch in one plot the excess minority–carrier concentration as a function of position for questions (a)
and (b).
Figure 7.10
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