Microelectronics
Read the Reviews:
“… an immensely useful book for the researcher in this field and even for
some like me who do not work exactly in this area. Any scientist interested
in strain modulation of device properties will value this book.”
—Supriyo Bandyopadhyay, Virginia Commonwealth University
“… a timely bridge from the conventional MOSFETs to advanced strainengineered MOSFETs to non-classical multiple gate devices to FinFETs.
… I strongly recommend this book.”
—Dr. Enrique Miranda, Universitat Autònoma de Barcelona
Currently strain engineering is the main technique used to enhance the performance of
advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written
from an engineering application standpoint, Strain-Engineered MOSFETs introduces
promising strain techniques to fabricate strain-engineered MOSFETs and methods to assess
the applications of these techniques. The book provides the background and physical
insight needed to understand new and future developments in the modelling and design of
n- and p-MOSFETs at nanoscale.
This book focuses on recent developments in strain-engineered MOSFETS implemented
in high-mobility substrates such as Ge, SiGe, strained-Si, ultrathin germanium-on-insulator
platforms, combined with high-k insulators and metal gate. It covers the materials aspects,
principles, and design of advanced devices, fabrication, and applications. It also presents a
full technology computer-aided design (TCAD) methodology for strain-engineering in Si-CMOS
technology involving data flow from process simulation to process variability simulation via
device simulation and generation of SPICE process compact models for manufacturing for
yield optimisation.
Microelectronics fabrication is facing serious challenges due to the introduction of new
materials in manufacturing and fundamental limitations of nanoscale devices that result
in increasing unpredictability in the characteristics of the devices. The downscaling of
CMOS technologies has brought about increased variability of key parameters affecting the
performance of integrated circuits. This book provides a single text that combines coverage
of strain-engineered MOSFETS and their modelling using TCAD, making it a tool for process
technology development and the design of strain-engineered MOSFETs.
ISBN: 978-1-4665-0055-6
9 781466 500556
9 0 0 0 0
K14376
Read the Reviews:
“… an immensely useful book for the researcher in this field and even for
some like me who do not work exactly in this area. Any scientist interested
in strain modulation of device properties will value this book.”
—Supriyo Bandyopadhyay, Virginia Commonwealth University
“… a timely bridge from the conventional MOSFETs to advanced strainengineered MOSFETs to non-classical multiple gate devices to FinFETs.
… I strongly recommend this book.”
—Dr. Enrique Miranda, Universitat Autònoma de Barcelona
Currently strain engineering is the main technique used to enhance the performance of
advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written
from an engineering application standpoint, Strain-Engineered MOSFETs introduces
promising strain techniques to fabricate strain-engineered MOSFETs and methods to assess
the applications of these techniques. The book provides the background and physical
insight needed to understand new and future developments in the modelling and design of
n- and p-MOSFETs at nanoscale.
This book focuses on recent developments in strain-engineered MOSFETS implemented
in high-mobility substrates such as Ge, SiGe, strained-Si, ultrathin germanium-on-insulator
platforms, combined with high-k insulators and metal gate. It covers the materials aspects,
principles, and design of advanced devices, fabrication, and applications. It also presents a
full technology computer-aided design (TCAD) methodology for strain-engineering in Si-CMOS
technology involving data flow from process simulation to process variability simulation via
device simulation and generation of SPICE process compact models for manufacturing for
yield optimisation.
Microelectronics fabrication is facing serious challenges due to the introduction of new
materials in manufacturing and fundamental limitations of nanoscale devices that result
in increasing unpredictability in the characteristics of the devices. The downscaling of
CMOS technologies has brought about increased variability of key parameters affecting the
performance of integrated circuits. This book provides a single text that combines coverage
of strain-engineered MOSFETS and their modelling using TCAD, making it a tool for process
technology development and the design of strain-engineered MOSFETs.
ISBN: 978-1-4665-0055-6
9 781466 500556
9 0 0 0 0
K14376
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