267
Process Compact Modelling of Strain-Engineered MOSFETs
4.5e+08
–6.93e+07
–5.88e+08
–1.11e+09
–1.63e+09
–2.15e+09
–2.15e+09 –1.63e+09 –1.11e+09
PCM
(a)
–5.88e+08 –6.93e+07 –4.5e+08
Data
6.83e+08
5.45e+08
4.08e+08
2.7e+08
1.33e+08
–4.49e+06
–4.49e+06
1.33e+08
2.7e+08
PCM
(b)
4.08e+08
5.45e+08
6.83e+08
Data
FIGURE 9.16
(a) PCM validation for p-MOSFETs with respect to TCAD simulation. (b) PCM validation for
n-MOSFETs with respect to TCAD simulation.