193
Noise in Strain-Engineered Devices
0.0
0.0
0.5
1.0
1.5
I
c (mA)
2.0
2.5
3.0
3.5
4.0
0.5
1.0
V ce (V)
V be (V)
I b
I c
V be (V)
I
c, I
b (A)
V be
0.7 V
0.75 V
0.8 V
0.85 V
0.9 V
1.5
2.0
10
–10
10
–9
10
–8
10
–7
10
–6
10
–5
10
–4
10 –3
10
–2
10
–1
10
0
0.50 0.55 0.60 0.65 0.70 0.75 0.80
A E = 0.42 × 0.84 µm 2
0.85 0.90
0.55
120
110
100
β
90
80
70
0.60 0.65 0.70 0.75 0.80 0.85 0.90
FIGURE 6.37
(a) I C -V CE characteristics of SiGe:C HBT. (b) Gummel plot of the SiGe:C HBT with emitter area
0.42 × 0.84 µm 2 ; inset showing the β-V BE characteristics of the HBT.