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About the Authors
Dr. C. K. Maiti received his BSc (Honors in Physics), B.Tech. (in Applied
Physics), and M.Tech. in radiophysics and electronics from the University
of Calcutta; MSc (by research) from the University of Technology in
Loughborough, UK; and PhD from the Indian Institute of Technology–
Kharagpur in 1969, 1972, 1974, 1976, and 1984, respectively. Dr. Maiti joined
the Department of Electronics and Electrical Communication Engineering
of the Indian Institute of Technology–Kharagpur in 1984 as an assistant
professor and was appointed professor in 1999. He is currently the head of
the department and leads the semiconductor device/process (TCAD) simulation research group within the department. He has also contributed significantly in the areas of low-temperature dielectric formation on Si, III-V
semiconductors, and group IV alloy layer films. He has published four
books in the silicon-germanium and strained silicon area. Dr. Maiti has
edited the Selected Works of Professor Herbert Kroemer, published by World
Scientific (Singapore, 2008). He has also served as the guest editor for the
Special Issues on Silicon-Germanium of Solid-State Electronics (November 2001)
and Heterostructure Silicon (August 2004). He has authored/coauthored
more than 250 technical articles and conference publications. Dr. Maiti’s
current research interests cover various aspects of semiconductor process
and device simulation of heterojunction transistors involving strained
layers.
Dr. T. K. Maiti obtained his MSc degree with a gold medal in physics
from Vidyasagar University, India, in 2005. In November 2005, he joined
Microelectronics Centre, Indian Institute of Technology–Kharagpur, India,
to carry out research work on technology CAD (TCAD) of strain-engineered
MOSFETs. He completed his PhD in engineering from the Department of
Electronics and Telecommunication Engineering at Jadavpur University,
India, in 2009. Dr. Maiti then moved to Canada to work at McMaster University as a postdoctoral fellow on design of advanced inorganic devices (i.e.,
silicon, III-V, and II-VI) on silicon via modelling of the device structure, fabrication process, and electrical performances in the Engineering Physics
Department from February 2010 to February 2012. Since March 2012 he
has been working as a researcher at HiSIM Research Centre, Hiroshima
University, Japan. Dr. Maiti’s current research interests include the experimental and simulation analysis of future generation semiconductor devices
as well as the development of reliable compact models for circuit and systemlevel simulation.
About the Authors
Dr. C. K. Maiti received his BSc (Honors in Physics), B.Tech. (in Applied
Physics), and M.Tech. in radiophysics and electronics from the University
of Calcutta; MSc (by research) from the University of Technology in
Loughborough, UK; and PhD from the Indian Institute of Technology–
Kharagpur in 1969, 1972, 1974, 1976, and 1984, respectively. Dr. Maiti joined
the Department of Electronics and Electrical Communication Engineering
of the Indian Institute of Technology–Kharagpur in 1984 as an assistant
professor and was appointed professor in 1999. He is currently the head of
the department and leads the semiconductor device/process (TCAD) simulation research group within the department. He has also contributed significantly in the areas of low-temperature dielectric formation on Si, III-V
semiconductors, and group IV alloy layer films. He has published four
books in the silicon-germanium and strained silicon area. Dr. Maiti has
edited the Selected Works of Professor Herbert Kroemer, published by World
Scientific (Singapore, 2008). He has also served as the guest editor for the
Special Issues on Silicon-Germanium of Solid-State Electronics (November 2001)
and Heterostructure Silicon (August 2004). He has authored/coauthored
more than 250 technical articles and conference publications. Dr. Maiti’s
current research interests cover various aspects of semiconductor process
and device simulation of heterojunction transistors involving strained
layers.
Dr. T. K. Maiti obtained his MSc degree with a gold medal in physics
from Vidyasagar University, India, in 2005. In November 2005, he joined
Microelectronics Centre, Indian Institute of Technology–Kharagpur, India,
to carry out research work on technology CAD (TCAD) of strain-engineered
MOSFETs. He completed his PhD in engineering from the Department of
Electronics and Telecommunication Engineering at Jadavpur University,
India, in 2009. Dr. Maiti then moved to Canada to work at McMaster University as a postdoctoral fellow on design of advanced inorganic devices (i.e.,
silicon, III-V, and II-VI) on silicon via modelling of the device structure, fabrication process, and electrical performances in the Engineering Physics
Department from February 2010 to February 2012. Since March 2012 he
has been working as a researcher at HiSIM Research Centre, Hiroshima
University, Japan. Dr. Maiti’s current research interests include the experimental and simulation analysis of future generation semiconductor devices
as well as the development of reliable compact models for circuit and systemlevel simulation.