ix
Preface
Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations
of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The downscaling of complementary metal-oxidesemiconductor (CMOS) technologies has brought about increased variability
of key parameters affecting the performance of integrated circuits. In siliconbased microelectronics, technology computer-aided design (TCAD) is well
established not only in the design phase but also in the manufacturing
process. Device design procedures are now more challenging due to highperformance specifications, fast design cycles, and high yield requirements. Design for manufacturability and statistical design techniques are
being employed to meet the challenges and difficulties of manufacturing of
nanoscale-integrated circuits in CMOS technologies.
As mainstream CMOS technology is scaled below the 22 nm technology
node, development of a rigorous physical and predictive compact model for
circuit simulation that covers geometry, bias, temperature, DC, AC, radio
frequency (RF), and noise characteristics becomes a major challenge. While
introducing new device structures, innovation has always been an important
part in device scaling and the integration of new materials. It is envisioned
that the right combination of global biaxial and local uniaxial strain could
provide additional mobility improvements at low electric fields. Written from
an engineering application standpoint, the book provides the background
and physical insight needed to understand new and future developments in
the modelling and design of n- and p-MOSFETs at nanoscale.
Understanding predictive modelling principles to gain insight in future
technology trends is important for future circuit design research and integrated circuit (IC) development. Technology CAD is a bridge between the
design world and the manufacturing world. Compact models are useful not
only for long-term product design but also for early evaluation of a technology for circuit manufacturing. The ultimate goal of predictive technology
and process compact modelling is to describe any process technology accurately. The concepts of process compact and process technology modelling
are essential to achieve the necessary knowledge transfer, which has proven
to be useful in the silicon manufacturing world.
The focus of this book is on state-of-the-art MOSFETs, implemented in highmobility substrates such as Ge, SiGe, strained Si, and ultra-thin germaniumon-insulator platforms, combined with high-k insulators and metal-gate. The
book consists of 10 main chapters covering substrate-induced strain engineering in CMOS technology, process-induced stress, electronic properties
of strain-engineered semiconductors, strain-engineered MOSFETs, noise in
Preface
Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations
of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The downscaling of complementary metal-oxidesemiconductor (CMOS) technologies has brought about increased variability
of key parameters affecting the performance of integrated circuits. In siliconbased microelectronics, technology computer-aided design (TCAD) is well
established not only in the design phase but also in the manufacturing
process. Device design procedures are now more challenging due to highperformance specifications, fast design cycles, and high yield requirements. Design for manufacturability and statistical design techniques are
being employed to meet the challenges and difficulties of manufacturing of
nanoscale-integrated circuits in CMOS technologies.
As mainstream CMOS technology is scaled below the 22 nm technology
node, development of a rigorous physical and predictive compact model for
circuit simulation that covers geometry, bias, temperature, DC, AC, radio
frequency (RF), and noise characteristics becomes a major challenge. While
introducing new device structures, innovation has always been an important
part in device scaling and the integration of new materials. It is envisioned
that the right combination of global biaxial and local uniaxial strain could
provide additional mobility improvements at low electric fields. Written from
an engineering application standpoint, the book provides the background
and physical insight needed to understand new and future developments in
the modelling and design of n- and p-MOSFETs at nanoscale.
Understanding predictive modelling principles to gain insight in future
technology trends is important for future circuit design research and integrated circuit (IC) development. Technology CAD is a bridge between the
design world and the manufacturing world. Compact models are useful not
only for long-term product design but also for early evaluation of a technology for circuit manufacturing. The ultimate goal of predictive technology
and process compact modelling is to describe any process technology accurately. The concepts of process compact and process technology modelling
are essential to achieve the necessary knowledge transfer, which has proven
to be useful in the silicon manufacturing world.
The focus of this book is on state-of-the-art MOSFETs, implemented in highmobility substrates such as Ge, SiGe, strained Si, and ultra-thin germaniumon-insulator platforms, combined with high-k insulators and metal-gate. The
book consists of 10 main chapters covering substrate-induced strain engineering in CMOS technology, process-induced stress, electronic properties
of strain-engineered semiconductors, strain-engineered MOSFETs, noise in