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6 Advanced Models for Practical Devices
13. Hara S (2001) The Schottky limit and a charge neutrality level found on metal/6H-SiC
interfaces. Surf Sci 494:L805–L810
14. Lu W, Collins WE, Mitchel WC (2004) SiC power materials: devices and applications. In:
Feng ZC (ed) Springer series in materials science. Springer-Verlag, Berlin
15. Hayashi N, Ito E, Oji H, Yoshimura D, Seki K (2001) Energy level alignment and band bending
at TPD/metal interfaces studied by Kelvin probe method. Synth Met 121:1717–1718
16. Mönch W (2012) On the alleviation of Fermi-level pinning by ultrathin insulator layers in
Schottky contacts. J Appl Phys 111:073706-1-073706–7
17. Tsui BY, Kao MH (2013) Mechanism of Schottky barrier height modulation by thin dielectric
insertion on n-type germanium. Appl Phys Lett 103:032104-1-032104–4
18. Shiraishi K, Nakayama T, Akasaka Y, Miyazaki S, Nakaoka T, Ohmori K, Ahmet P, Torii K,
Watanabe H, Chikyow T, Nara Y, Iwai H, Yamada K (2006) New theory of effective work
functions at metal/high-k dielectric interfaces—application to metal/high-k HfO 2 and La 2 O 3
dielectric interfaces. ECS Trans 2:25–40
19. Nakayama T, Shiraishi K, Miyazaki S, Akasaka Y, Nakaoka T, Torii K, Ohta A, Ahmet P,
Ohmori K, Umezawa N, Watanabe H, Chikyow T, Nara Y, Iwai H, Yamada K (2006) Physics
of metal/high-k interfaces. ECS Trans 3:129–140
6 Advanced Models for Practical Devices
13. Hara S (2001) The Schottky limit and a charge neutrality level found on metal/6H-SiC
interfaces. Surf Sci 494:L805–L810
14. Lu W, Collins WE, Mitchel WC (2004) SiC power materials: devices and applications. In:
Feng ZC (ed) Springer series in materials science. Springer-Verlag, Berlin
15. Hayashi N, Ito E, Oji H, Yoshimura D, Seki K (2001) Energy level alignment and band bending
at TPD/metal interfaces studied by Kelvin probe method. Synth Met 121:1717–1718
16. Mönch W (2012) On the alleviation of Fermi-level pinning by ultrathin insulator layers in
Schottky contacts. J Appl Phys 111:073706-1-073706–7
17. Tsui BY, Kao MH (2013) Mechanism of Schottky barrier height modulation by thin dielectric
insertion on n-type germanium. Appl Phys Lett 103:032104-1-032104–4
18. Shiraishi K, Nakayama T, Akasaka Y, Miyazaki S, Nakaoka T, Ohmori K, Ahmet P, Torii K,
Watanabe H, Chikyow T, Nara Y, Iwai H, Yamada K (2006) New theory of effective work
functions at metal/high-k dielectric interfaces—application to metal/high-k HfO 2 and La 2 O 3
dielectric interfaces. ECS Trans 2:25–40
19. Nakayama T, Shiraishi K, Miyazaki S, Akasaka Y, Nakaoka T, Torii K, Ohta A, Ahmet P,
Ohmori K, Umezawa N, Watanabe H, Chikyow T, Nara Y, Iwai H, Yamada K (2006) Physics
of metal/high-k interfaces. ECS Trans 3:129–140