112
5 Modification of Band Alignment via Work Function Control
8. Lieten RR, Afanas’ev VV, Thoan NH, Degroote S, Walukiewicz W, Borghs G (2011) Mechanisms of Schottky barrier control on n-type germanium using Ge 3 N 4 interlayers. J Electrochem
Soc 158:H358–H362
9. Lu CH, Wong GMT, Deal MD, Tsai W, Majhi P, Chui CO, Visokay MR, Chambers JJ, Colombo
L, Clemens BM, Nishi Y (2005) Characteristics and mechanism of tunable work function gate
electrodes using a bilayer metal structure on SiO 2 and HfO 2 . IEEE Electron Device Lett
26:445–447
10. Zhao QT, Breuer U, Rije E, Lenk S, Mantl S (2005) Tuning of NiSi/Si Schottky barrier heights
by sulfur segregation during Ni silicidation. Appl Phys Lett 86:062108-1–62113
5 Modification of Band Alignment via Work Function Control
8. Lieten RR, Afanas’ev VV, Thoan NH, Degroote S, Walukiewicz W, Borghs G (2011) Mechanisms of Schottky barrier control on n-type germanium using Ge 3 N 4 interlayers. J Electrochem
Soc 158:H358–H362
9. Lu CH, Wong GMT, Deal MD, Tsai W, Majhi P, Chui CO, Visokay MR, Chambers JJ, Colombo
L, Clemens BM, Nishi Y (2005) Characteristics and mechanism of tunable work function gate
electrodes using a bilayer metal structure on SiO 2 and HfO 2 . IEEE Electron Device Lett
26:445–447
10. Zhao QT, Breuer U, Rije E, Lenk S, Mantl S (2005) Tuning of NiSi/Si Schottky barrier heights
by sulfur segregation during Ni silicidation. Appl Phys Lett 86:062108-1–62113