5.2 Modification of Band Alignment
111
p-Si
n
n
oxide
source
drain
gate
Si-MOS
(a)
(b)
Ohmic contact
required
Ohmic contact
required
Si
Ni
SiDP)
NiSi
Interface segregaaon of
dopant during Ni-Si
reaccon to lower SBH
Fig. 5.18 a Schematic illustration of Si-MOS and interface segregation for realizing ohmic contact
at both source–Si and drain–Si interfaces with electrodes. b SBH as a function of concentration of
segregated S at NiSi/Si interface [10]
References
1. Afanasev VV, Stesmans A, Pantisano L, Schram T (2005) Electron photoemission from
conducting nitrides (TiN x , TaN x ) into SiO 2 and HfO 2 . Appl Phys Lett 86:232902-1-232902–3
2. Yeo YC (2004) Metal gate technology for nanoscale transistors—material selection and process
integration issues. Thin Solid Films 462–463:34–41
3. Robertson J (2006) High dielectric constant gate oxides for metal oxide Si transistors. Rep
Prog Phys 69:327–396
4. Yoshitake M (2006) Evaluation of electric potential at metal-insulator interface using electron
spectroscopy and Kelvin probe techniques. Mater Res Soc Proc 894:45–53
5. Ip K, Thaler GT, Yang H, Han SY, Li Y, Norton DP, Pearton SJ, Jang S, Ren F (2006) Contacts
to ZnO. J Cryst Growth 287:149–156
6. Chang Y, Hwu Y, Hansen J, Zanini F, Margaritondo G (1989) Nature of the Schottky term in
the Schottky barrier. Phys Rev Lett 63:1845–1848
7. Nagata T, Ahmet P, Yoo YZ, Yamada K, Tsutsui K, Wada Y, Chikyow T (2006) Schottky
metal library for ZNO-based UV photodiode fabricated by the combinatorial ion beam-assisted
deposition. Appl Surf Sci 252:2503–2506
111
p-Si
n
n
oxide
source
drain
gate
Si-MOS
(a)
(b)
Ohmic contact
required
Ohmic contact
required
Si
Ni
SiDP)
NiSi
Interface segregaaon of
dopant during Ni-Si
reaccon to lower SBH
Fig. 5.18 a Schematic illustration of Si-MOS and interface segregation for realizing ohmic contact
at both source–Si and drain–Si interfaces with electrodes. b SBH as a function of concentration of
segregated S at NiSi/Si interface [10]
References
1. Afanasev VV, Stesmans A, Pantisano L, Schram T (2005) Electron photoemission from
conducting nitrides (TiN x , TaN x ) into SiO 2 and HfO 2 . Appl Phys Lett 86:232902-1-232902–3
2. Yeo YC (2004) Metal gate technology for nanoscale transistors—material selection and process
integration issues. Thin Solid Films 462–463:34–41
3. Robertson J (2006) High dielectric constant gate oxides for metal oxide Si transistors. Rep
Prog Phys 69:327–396
4. Yoshitake M (2006) Evaluation of electric potential at metal-insulator interface using electron
spectroscopy and Kelvin probe techniques. Mater Res Soc Proc 894:45–53
5. Ip K, Thaler GT, Yang H, Han SY, Li Y, Norton DP, Pearton SJ, Jang S, Ren F (2006) Contacts
to ZnO. J Cryst Growth 287:149–156
6. Chang Y, Hwu Y, Hansen J, Zanini F, Margaritondo G (1989) Nature of the Schottky term in
the Schottky barrier. Phys Rev Lett 63:1845–1848
7. Nagata T, Ahmet P, Yoo YZ, Yamada K, Tsutsui K, Wada Y, Chikyow T (2006) Schottky
metal library for ZNO-based UV photodiode fabricated by the combinatorial ion beam-assisted
deposition. Appl Surf Sci 252:2503–2506