tice contraction of 0.01–0.02 A ˚ within the outermost two to three layers. Inside the
hydrogenated Si nanocrystals, there is only a very small strain (lattice expansion) of
the order of 10
À4 –10
À3 , in good agreement with the X-ray diffraction measurement. The fully hydrogenated Si nanocrystals are the most stable structures comFig. 10.46. Stable structures of some selected
Si clusters. Si 18 , Si 20 , Si 45 , and Si 47 correspond
to the stacked structures from the tricapped
trigonal prisms. Si 42 consists of the trigonal
prisms. Si 57 refers to the stacked trigonal
prisms inserted among trigonal prisms by one
tricapped trigonal prism. The binding energy
per atom is listed below the corresponding
structure [86].
10 Oxide-Assisted Growth of Silicon and Related Nanowires
364
hydrogenated Si nanocrystals, there is only a very small strain (lattice expansion) of
the order of 10
À4 –10
À3 , in good agreement with the X-ray diffraction measurement. The fully hydrogenated Si nanocrystals are the most stable structures comFig. 10.46. Stable structures of some selected
Si clusters. Si 18 , Si 20 , Si 45 , and Si 47 correspond
to the stacked structures from the tricapped
trigonal prisms. Si 42 consists of the trigonal
prisms. Si 57 refers to the stacked trigonal
prisms inserted among trigonal prisms by one
tricapped trigonal prism. The binding energy
per atom is listed below the corresponding
structure [86].
10 Oxide-Assisted Growth of Silicon and Related Nanowires
364