nanospheres enclosed in and linked together to form a chain by SiO 2 . Similar silicon nanochains (SiNC), this time of boron-doped Si were grown [60, 61] by laser
ablation of a compressed target of a mixed powder of SiO and B 2 O 3 at 1200
C.
TEM analysis including imaging (Figure 10.11), diffraction and EDS indeed verifies a structure of nanochains with uniform diameters of the Si nanospheres conFig. 10.10. Diagram showing the spheroidization process of one-dimensional Si nanowires [33].
Fig. 10.11. TEM image showing the morphology of Si nanochains.
10.3 Control of SiNW Nanostructures in OAG 325
ablation of a compressed target of a mixed powder of SiO and B 2 O 3 at 1200
C.
TEM analysis including imaging (Figure 10.11), diffraction and EDS indeed verifies a structure of nanochains with uniform diameters of the Si nanospheres conFig. 10.10. Diagram showing the spheroidization process of one-dimensional Si nanowires [33].
Fig. 10.11. TEM image showing the morphology of Si nanochains.
10.3 Control of SiNW Nanostructures in OAG 325