Nesper et al., J. Electrochem. Soc. 1999,
146, 2780–2783.
257 A. Dobley, K. Ngala, S. Yang et al.,
Chem. Mater. 2001, 13, 4382–4386.
258 A. Rothschild, S. R. Cohen, R.
Tenne, Appl. Phys. Lett. 1999, 75,
4025–4027.
259 L. Rapoport, Y. Bilik, Y. Feldman et
al., Nature 1997, 387, 791–793.
260 J. Chen, S.-L. Li, Q. Xu et al., Chem.
Commun. 2002, 1722–1723.
261 M. Co ˆ te ´, M. L. Cohen, D. J. Chadi,
Phys. Rev. B 1998, 58, R4277–R4280.
262 F. Cerrina, C. Marrian, MRS Bull.
1996, 21 (December), 56.
263 (a) J. M. Gibson, Phys. Today 1997,
October, 56–61; (b) S. Matsui, Y.
Ochiai, Nanotechnology 1996, 7, 247–
258.
264 (a) S. H. Hong, J. Zhu, C. A.
Mirkin, Science 1999, 286, 523–525;
(b) J. A. Dagata, Science 1995, 270,
1625 (see reference therein).
265 (a) M. D. Levenson, P. J. Silverman,
R. George et al., Solid State Technol.
1995, 38, 81–82, 84, 86, 88, 90, 92, 94,
96, 98; (b) P. N. Dunn, Solid State
Technol. 1994, 37, 49–50, 52, 58, 61–
62.
266 Y. Xia, J. A. Rogers, K. E. Paul et al.,
Chem. Rev. 1999, 99, 1823–1848.
267 D. Routkevitch, A. A. Tager, J.
Haruyama et al., IEEE Trans. Electron
Devices 1996, 43, 1646–1657.
268 P. Yang, Y. Wu, R. Fan, Int. J.
Nanosci. 2002, 1, 1–39.
269 Y. Xia, P. Yang, Y. Sun et al., Adv.
Mater. 2003, 15, 353–389.
270 E. I. Givargizov, Highly Anisotropic
Crystals, eds. M. Senechal, S.
College, Reidel, Dordrecht, The
Netherlands 1987.
271 Y. Wu and P. Yang, Chem. Mater.
2000, 12, 605–607.
272 M. H. Huang, Y. Wu, H. Feick et al.,
Adv. Mater. 2001, 13, 113–116.
273 A. M. Morales, C. M. Lieber, Science
1998, 279, 208–211.
274 (a) C. R. Martin, Science 1994, 266,
1961–1966; (b) D. Almawlawi, C. Z.
Liu, M. Moskovits, J. Mater. Res.
1994, 9, 1014–1018.
275 W. Han, S. Fan, W. Li et al., Science
1997, 277, 1287–1289.
276 T. J. Trentler, K. M. Hickman, S. C.
Geol et al., Science 1995, 270, 1791–
1794.
277 X. F. Duan, C. M. Lieber, Adv. Mater.
2000, 12, 298–302.
278 R. S. Wagner, in Whisker Technology,
ed. A. P. Levitt, Wiley-Interscience,
New York 1970, 47–119.
279 Y. Wu, P. Yang, J. Am. Chem. Soc.
2001, 123, 3165–3166.
280 M. S. Gudiksen, C. M. Lieber, J. Am.
Chem. Soc. 2000, 122, 8801–8802.
281 C. C. Chen, C. C. Yeh, C. H. Chen et
al., J. Am. Chem. Soc. 2001, 123, 2791–
2798.
282 X. F. Duan, C. M. Lieber, J. Am.
Chem. Soc. 2000, 122, 188–189.
283 W.-S. Shi, H.-Y. Peng, Y.-F. Zheng
et al., Adv. Mater. 2000, 12, 1343–1345.
284 C. C. Tang, S. Fan, M. L. de la
Chapelle et al., Adv. Mater. 2000, 12,
1346–1348.
285 G. Gu, M. Burghard, G. T. Kim,
G. S. Dusberg et al., J. Appl. Phys.
2001, 90, 5747–5751.
286 Z. W. Pan, H. L. Lai, F. C. K. Au et
al., Adv. Mater. 2000, 12, 1186–1190.
287 Y. Wu, B. Messer, P. Yang, Adv.
Mater. 2001, 13, 1487–1489.
288 M. Yazawa, M. Koguchi, A. Muto et
al., Adv. Mater. 1993, 5, 577–580.
289 J. Liu, X. Zhang, Y. J. Zhang et al.,
J. Mater. Res. 2001, 16, 3133–3138.
290 K. Hiruma, M. Yazawa, T.
Katsuyama et al., J. Appl. Phys. 1995,
77, 447–462.
291 T. Shimada, K. Hiruma, M. Shirai
et al., Superlattices Microstruct. 1998,
24, 453–458.
292 X. F. Duan, J. F. Wang, C. M. Lieber,
Appl. Phys. Lett. 2000, 76, 1116–1118.
293 (a) S. T. Lee, N. Wang, C. S. Lee,
Mater. Sci. Eng. A 2000, 286, 16–23;
(b) N. Wang, Y. H. Tang, Y. F.
Zhang et al., Chem. Phy. Lett. 1999,
299, 237–242; (c) H. W. Seo, S. Y.
Bae, J. Park et al., Chem. Commun.
2002, 2564–2565; (d) Y. F. Zhang,
Y. H. Tang, C. Lam et al., J. Cryst.
Growth 2000, 212, 115–118.
294 (a) S. T. Lee, N. Wang, Y. F. Zhang
et al., MRS Bull. 1999, 24, 36–42; (b)
D. D. D. Ma, C. S. Lee, F. C. K. Au et
al., Science 2003, 299, 1874–1877.
8 Nanotubes and Nanowires
282
146, 2780–2783.
257 A. Dobley, K. Ngala, S. Yang et al.,
Chem. Mater. 2001, 13, 4382–4386.
258 A. Rothschild, S. R. Cohen, R.
Tenne, Appl. Phys. Lett. 1999, 75,
4025–4027.
259 L. Rapoport, Y. Bilik, Y. Feldman et
al., Nature 1997, 387, 791–793.
260 J. Chen, S.-L. Li, Q. Xu et al., Chem.
Commun. 2002, 1722–1723.
261 M. Co ˆ te ´, M. L. Cohen, D. J. Chadi,
Phys. Rev. B 1998, 58, R4277–R4280.
262 F. Cerrina, C. Marrian, MRS Bull.
1996, 21 (December), 56.
263 (a) J. M. Gibson, Phys. Today 1997,
October, 56–61; (b) S. Matsui, Y.
Ochiai, Nanotechnology 1996, 7, 247–
258.
264 (a) S. H. Hong, J. Zhu, C. A.
Mirkin, Science 1999, 286, 523–525;
(b) J. A. Dagata, Science 1995, 270,
1625 (see reference therein).
265 (a) M. D. Levenson, P. J. Silverman,
R. George et al., Solid State Technol.
1995, 38, 81–82, 84, 86, 88, 90, 92, 94,
96, 98; (b) P. N. Dunn, Solid State
Technol. 1994, 37, 49–50, 52, 58, 61–
62.
266 Y. Xia, J. A. Rogers, K. E. Paul et al.,
Chem. Rev. 1999, 99, 1823–1848.
267 D. Routkevitch, A. A. Tager, J.
Haruyama et al., IEEE Trans. Electron
Devices 1996, 43, 1646–1657.
268 P. Yang, Y. Wu, R. Fan, Int. J.
Nanosci. 2002, 1, 1–39.
269 Y. Xia, P. Yang, Y. Sun et al., Adv.
Mater. 2003, 15, 353–389.
270 E. I. Givargizov, Highly Anisotropic
Crystals, eds. M. Senechal, S.
College, Reidel, Dordrecht, The
Netherlands 1987.
271 Y. Wu and P. Yang, Chem. Mater.
2000, 12, 605–607.
272 M. H. Huang, Y. Wu, H. Feick et al.,
Adv. Mater. 2001, 13, 113–116.
273 A. M. Morales, C. M. Lieber, Science
1998, 279, 208–211.
274 (a) C. R. Martin, Science 1994, 266,
1961–1966; (b) D. Almawlawi, C. Z.
Liu, M. Moskovits, J. Mater. Res.
1994, 9, 1014–1018.
275 W. Han, S. Fan, W. Li et al., Science
1997, 277, 1287–1289.
276 T. J. Trentler, K. M. Hickman, S. C.
Geol et al., Science 1995, 270, 1791–
1794.
277 X. F. Duan, C. M. Lieber, Adv. Mater.
2000, 12, 298–302.
278 R. S. Wagner, in Whisker Technology,
ed. A. P. Levitt, Wiley-Interscience,
New York 1970, 47–119.
279 Y. Wu, P. Yang, J. Am. Chem. Soc.
2001, 123, 3165–3166.
280 M. S. Gudiksen, C. M. Lieber, J. Am.
Chem. Soc. 2000, 122, 8801–8802.
281 C. C. Chen, C. C. Yeh, C. H. Chen et
al., J. Am. Chem. Soc. 2001, 123, 2791–
2798.
282 X. F. Duan, C. M. Lieber, J. Am.
Chem. Soc. 2000, 122, 188–189.
283 W.-S. Shi, H.-Y. Peng, Y.-F. Zheng
et al., Adv. Mater. 2000, 12, 1343–1345.
284 C. C. Tang, S. Fan, M. L. de la
Chapelle et al., Adv. Mater. 2000, 12,
1346–1348.
285 G. Gu, M. Burghard, G. T. Kim,
G. S. Dusberg et al., J. Appl. Phys.
2001, 90, 5747–5751.
286 Z. W. Pan, H. L. Lai, F. C. K. Au et
al., Adv. Mater. 2000, 12, 1186–1190.
287 Y. Wu, B. Messer, P. Yang, Adv.
Mater. 2001, 13, 1487–1489.
288 M. Yazawa, M. Koguchi, A. Muto et
al., Adv. Mater. 1993, 5, 577–580.
289 J. Liu, X. Zhang, Y. J. Zhang et al.,
J. Mater. Res. 2001, 16, 3133–3138.
290 K. Hiruma, M. Yazawa, T.
Katsuyama et al., J. Appl. Phys. 1995,
77, 447–462.
291 T. Shimada, K. Hiruma, M. Shirai
et al., Superlattices Microstruct. 1998,
24, 453–458.
292 X. F. Duan, J. F. Wang, C. M. Lieber,
Appl. Phys. Lett. 2000, 76, 1116–1118.
293 (a) S. T. Lee, N. Wang, C. S. Lee,
Mater. Sci. Eng. A 2000, 286, 16–23;
(b) N. Wang, Y. H. Tang, Y. F.
Zhang et al., Chem. Phy. Lett. 1999,
299, 237–242; (c) H. W. Seo, S. Y.
Bae, J. Park et al., Chem. Commun.
2002, 2564–2565; (d) Y. F. Zhang,
Y. H. Tang, C. Lam et al., J. Cryst.
Growth 2000, 212, 115–118.
294 (a) S. T. Lee, N. Wang, Y. F. Zhang
et al., MRS Bull. 1999, 24, 36–42; (b)
D. D. D. Ma, C. S. Lee, F. C. K. Au et
al., Science 2003, 299, 1874–1877.
8 Nanotubes and Nanowires
282
