Fig. 8.31. Low magnification TEM images of
Ga 2 O 3 nanowires obtained by MWNTs as the
source of carbon. (a) At a flow rate of Ar maintained at 40 sccm and the product collected at
the inner tube. The arrow shows a nanobelt.
Inset is the SAED pattern of the sample. (b)
Flow rate of Ar maintained at 80 sccm and the
product collected at the outlet. (c) HREM of a
nanowire obtained on the inner tube by using
the same procedure on maintaining the flow of
the Ar gas at 60 sccm. The arrow indicates the
growth direction that makes an angle of 6
with the normal to the (102) planes. Reproduced
from ref. [302a], with permission.
8.4 Nanowires 263
Ga 2 O 3 nanowires obtained by MWNTs as the
source of carbon. (a) At a flow rate of Ar maintained at 40 sccm and the product collected at
the inner tube. The arrow shows a nanobelt.
Inset is the SAED pattern of the sample. (b)
Flow rate of Ar maintained at 80 sccm and the
product collected at the outlet. (c) HREM of a
nanowire obtained on the inner tube by using
the same procedure on maintaining the flow of
the Ar gas at 60 sccm. The arrow indicates the
growth direction that makes an angle of 6
with the normal to the (102) planes. Reproduced
from ref. [302a], with permission.
8.4 Nanowires 263