Fig. 7.10. XRD patterns and TEM images of
the InAs samples prepared by the solvothermal zinc co-reduction route (A, B) and by
the safe low temperature solvothermal route
(C, D, E).
(a) 100
C, before 1 M HCl treatment;
(b) 120
C, before 1 M HCl treatment;
(c) 160
C, before 1 M HCl treatment;
(d) 120
C, after 1 M HCl treatment;
(e) 160
C, after 1 M HCl treatment.
Fig. 7.11. XRD pattern (a) and TEM image (b) of the as-prepared InP nanocrystals.
7.2 Solvothermal Synthesis of III–V Nanomaterials 179
the InAs samples prepared by the solvothermal zinc co-reduction route (A, B) and by
the safe low temperature solvothermal route
(C, D, E).
(a) 100
C, before 1 M HCl treatment;
(b) 120
C, before 1 M HCl treatment;
(c) 160
C, before 1 M HCl treatment;
(d) 120
C, after 1 M HCl treatment;
(e) 160
C, after 1 M HCl treatment.
Fig. 7.11. XRD pattern (a) and TEM image (b) of the as-prepared InP nanocrystals.
7.2 Solvothermal Synthesis of III–V Nanomaterials 179
