Electrostatics of the Nanowires
with Radial p-n or p-i-n Junctions
V. L. Borblik
1 Introduction
In due time, it has been noted that such important characteristic of a conducting
medium as its near-surface depletion depth (which is usually minor part of the
sample volume) can compete with its dimension when considering the nanoobjects.
Then accurate assessment of this depth becomes especially important [1]. Furthermore, it has been proved that the boundary curvature mysteriously influences this
depth. In particular, the depletion depth increases (in comparison with the case of
plain boundary) with decreasing in a radius of cylindrical interface (the case of a
nanowire) and reaches limit value of
√
2W p (W p is the depletion depth for planar
boundary) when it amounts to the nanowire radius, i.e., when the depletion encompasses full volume of the nanowire [1]. In the case of spherical form of the boundary
(a quantum dot), increase in the depletion depth with decreasing in the quantum dot
radius becomes even more significant, and the full depletion of the dot volume is
reached already at the depletion depth value of
√
3W p [2, 3].
In recent time, great interest of the investigators is attracted to semiconductor
nanowires, especially to the multilayer ones whose layers are doped in a different
way. On the base of such objects, principally new constructions of the core–shell
devices are created which use transverse (radial) transport of the current carriers
(radial solar cells [4], radial photodiodes [5], and radial light-emitting devices [6]).
A p-n junction entering into the composition of these devices is such an interface
where depletion occurs on both sides. This problem was considered in [7] where the
authors have developed general electrostatic theory for radial p-n junction diode and
have marked out four types of its electric structure depending on a set of parameters.
V. L. Borblik (B)
Department of Electrical and Galvanomagnetic Properties of Semiconductors, V.Lashkarev
Institute of Semiconductor Physics, 41, Prospect Nauky, 03680 Kiev, Ukraine
e-mail: borblik@isp.kiev.ua
© Springer Nature Switzerland AG 2021
O. Fesenko and L. Yatsenko (eds.), Nanomaterials and Nanocomposites,
Nanostructure Surfaces, and Their Applications, Springer Proceedings
in Physics 246, https://doi.org/10.1007/978-3-030-51905-6_7
79
with Radial p-n or p-i-n Junctions
V. L. Borblik
1 Introduction
In due time, it has been noted that such important characteristic of a conducting
medium as its near-surface depletion depth (which is usually minor part of the
sample volume) can compete with its dimension when considering the nanoobjects.
Then accurate assessment of this depth becomes especially important [1]. Furthermore, it has been proved that the boundary curvature mysteriously influences this
depth. In particular, the depletion depth increases (in comparison with the case of
plain boundary) with decreasing in a radius of cylindrical interface (the case of a
nanowire) and reaches limit value of
√
2W p (W p is the depletion depth for planar
boundary) when it amounts to the nanowire radius, i.e., when the depletion encompasses full volume of the nanowire [1]. In the case of spherical form of the boundary
(a quantum dot), increase in the depletion depth with decreasing in the quantum dot
radius becomes even more significant, and the full depletion of the dot volume is
reached already at the depletion depth value of
√
3W p [2, 3].
In recent time, great interest of the investigators is attracted to semiconductor
nanowires, especially to the multilayer ones whose layers are doped in a different
way. On the base of such objects, principally new constructions of the core–shell
devices are created which use transverse (radial) transport of the current carriers
(radial solar cells [4], radial photodiodes [5], and radial light-emitting devices [6]).
A p-n junction entering into the composition of these devices is such an interface
where depletion occurs on both sides. This problem was considered in [7] where the
authors have developed general electrostatic theory for radial p-n junction diode and
have marked out four types of its electric structure depending on a set of parameters.
V. L. Borblik (B)
Department of Electrical and Galvanomagnetic Properties of Semiconductors, V.Lashkarev
Institute of Semiconductor Physics, 41, Prospect Nauky, 03680 Kiev, Ukraine
e-mail: borblik@isp.kiev.ua
© Springer Nature Switzerland AG 2021
O. Fesenko and L. Yatsenko (eds.), Nanomaterials and Nanocomposites,
Nanostructure Surfaces, and Their Applications, Springer Proceedings
in Physics 246, https://doi.org/10.1007/978-3-030-51905-6_7
79