306
V. Melnik et al.
change the point defect concentration in ZnO film and obtains the ZnO/Si structures
with desired properties.
Here, the charge transport properties related to the different magnetron-sputtered
ZnO and NiO thin film and interface morphologies, current-voltage characteristics,
and surface photovoltage will be discussed and favorable deposition conditions will
be concluded.
Different AZO films with thicknesses varying from 10 to 140 nm were prepared
on Si substrates by DC reactive magnetron sputtering. Some of them were modified
by using Ar
+ ion implantation (50 and 100 keV). The samples were annealed by
rapid thermal and furnace annealing at temperatures ranging from 450 to 750 °C.
The resulting films were studied using XRD, SIMS, SEM, as well as surface
photovoltage (SPV) decays. The diode structures were manufactured for investigation
of current-voltage (I–V ) and capacitance-voltage (C–V ) characteristics.
2 Formation of ZnO/Si Isotype Heterojunction at Room
Temperature and Its Structural and Morphological
Properties
Typical ZnO fingerprints with the diffraction lines from (100), (002), and (101) planes
are observed in the XRD spectra of AZO grown on Si (see Fig. 1). It is seen that, at
film thicknesses smaller than 67 nm, only one peak (002) is seen in the XRD spectra.
The (002) peak gains in intensity upon enhancement of the AZO film thickness
from 11 to 120 nm. This is indicative of the fact that ZnO columns appear having
crystallographic c-axis normal to the substrate surface. Moreover, the (002) peak
position shifts to higher diffraction angles for the film thicknesses of 11 and 22 nm,
which can be attributed to decreasing the film density with increasing its thickness.
Fig. 1 XRD patterns of
different ZnO films grown on
Si
V. Melnik et al.
change the point defect concentration in ZnO film and obtains the ZnO/Si structures
with desired properties.
Here, the charge transport properties related to the different magnetron-sputtered
ZnO and NiO thin film and interface morphologies, current-voltage characteristics,
and surface photovoltage will be discussed and favorable deposition conditions will
be concluded.
Different AZO films with thicknesses varying from 10 to 140 nm were prepared
on Si substrates by DC reactive magnetron sputtering. Some of them were modified
by using Ar
+ ion implantation (50 and 100 keV). The samples were annealed by
rapid thermal and furnace annealing at temperatures ranging from 450 to 750 °C.
The resulting films were studied using XRD, SIMS, SEM, as well as surface
photovoltage (SPV) decays. The diode structures were manufactured for investigation
of current-voltage (I–V ) and capacitance-voltage (C–V ) characteristics.
2 Formation of ZnO/Si Isotype Heterojunction at Room
Temperature and Its Structural and Morphological
Properties
Typical ZnO fingerprints with the diffraction lines from (100), (002), and (101) planes
are observed in the XRD spectra of AZO grown on Si (see Fig. 1). It is seen that, at
film thicknesses smaller than 67 nm, only one peak (002) is seen in the XRD spectra.
The (002) peak gains in intensity upon enhancement of the AZO film thickness
from 11 to 120 nm. This is indicative of the fact that ZnO columns appear having
crystallographic c-axis normal to the substrate surface. Moreover, the (002) peak
position shifts to higher diffraction angles for the film thicknesses of 11 and 22 nm,
which can be attributed to decreasing the film density with increasing its thickness.
Fig. 1 XRD patterns of
different ZnO films grown on
Si