90
P. K. Das et al.
Fig. 56 The curves of C 1 versus E 0 (electric quantum limit) at terahertz frequency in n-channel
accumulation layers of n-Indium Arsenide where (E/E g ) 1 for (a) the band structure containing
3 energy band constants and (b) the band structure containing 2 energy band constants
Fig. 57 The curves of C 1 versus E 0 (electric quantum limit) at terahertz frequency in n-channel
accumulation layers of n-Indium Arsenide where (E/E g ) 1 for (a) the band structure containing
3 energy band constants and (b) the band structure containing 2 energy band constants
E 0 in accumulation layers of Indium Arsenide under constraints (E/E g ) 1 and
(E/E g ) 1 electric field quantum limits have been drawn for (a) the band structure
contains 3 energy band constants and (b) the band structure contains 2 energy band
constants respectively.