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P. K. Das et al.
Fig. 44 The curves of C 2 versus x under terahertz frequency in quaternary materials for (a) the
band structure contains 3 energy band constants and (b) the band structure contains 2 energy band
constants where d z = 30 nm
Fig. 45 The curves of C 1 versus carrier degeneracy under terahertz frequency in HD QFs of
Cadmium Sulphide where (a) ¯
λ 0 = 0 and (b) ¯
λ 0 = 0
under the constraints (E/E g ) 1 and (E/E g ) 1 electric field quantum limits
have been drawn for (a) the band structure contains 3 energy band constants, (b) the
band structure contains 2 energy band constants and (c) where the band structure
defined by a single energy band constant, respectively. In Figs. 56 and 57, the curves
of the C 1 versus E 0 in accumulation layers of Indium Arsenide under weak and strong
electric field quantum limits have been drawn for (a) the band structure contains 3
energy band constants and (b) the band structure contains 2 energy band constants,
respectively. In Figs. 58 and 59, the curves of C 1 versus E 0 in accumulation layers