Terahertz Radiation from Gallium
Phosphide Avalanche Transit Time
Sources
Aritra Acharyya, Arindam Biswas, Bisal Sarkar, Amit Banerjee,
and Hiroshi Inokawa
Abstract The mechanism of terahertz (THz) energy emission from gallium phosphide (GaP)-based avalanche transit time (ATT) sources has been discussed here. Six
double-drift structured ATT devices based on GaP have been designed and optimized
for operating at 0.1, 0.15, 0.2, 0.3, 0.5, and 1.0 THz frequencies. The large-signal
results show that the THz performance of GaP ATT sources is more promising than
the ATT oscillators based on conventional semiconductors.
Keywords GaP · IMPATT · MBE · MOCVD · THz
1 Introduction
Wide bandgap (WBG) semiconductors (GaN, SiC, and diamond, etc.) have already
shown immense possibilities as base semiconductors of terahertz (THz) sources.
High bandgap energy, high breakdown field, exceptional transport properties, etc.,
make them highly suitable for being established as the potential THz base materials
[1–7]. Favorable electronic and thermal properties of those materials have already
A. Acharyya (B)
Department of Electronics and Communication Engineering, Cooch Behar Government
Engineering College, Harinchawra, Ghughumari, Cooch Behar, West Bengal 736170, India
e-mail: ari_besu@yahoo.co.in
A. Biswas
Mining Engineering Department, Centre for Organic Spin-Tronics and Optoelectronics Devices
(COSOD), Kazi Nazrul University, Asansol, Burdwan, West Bengal 713340, India
e-mail: mailarindambiswas@yahoo.co.in
B. Sarkar
R.P.B.M Jiaganj College of Engineering and Technology, Murshidabad, West Bengal, India
A. Banerjee
Department of Physics, Bidhan Chandra College, SB Gorai Road, Pathak Bari, Burdwan,
Asansol, West Bengal 713303, India
H. Inokawa
Research Institute of Electronics, Shizouka University, Shizouka, Japan
© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2021
A. Biswas et al. (eds.), Emerging Trends in Terahertz Engineering and System
Technologies, https://doi.org/10.1007/978-981-15-9766-4_4
49
Phosphide Avalanche Transit Time
Sources
Aritra Acharyya, Arindam Biswas, Bisal Sarkar, Amit Banerjee,
and Hiroshi Inokawa
Abstract The mechanism of terahertz (THz) energy emission from gallium phosphide (GaP)-based avalanche transit time (ATT) sources has been discussed here. Six
double-drift structured ATT devices based on GaP have been designed and optimized
for operating at 0.1, 0.15, 0.2, 0.3, 0.5, and 1.0 THz frequencies. The large-signal
results show that the THz performance of GaP ATT sources is more promising than
the ATT oscillators based on conventional semiconductors.
Keywords GaP · IMPATT · MBE · MOCVD · THz
1 Introduction
Wide bandgap (WBG) semiconductors (GaN, SiC, and diamond, etc.) have already
shown immense possibilities as base semiconductors of terahertz (THz) sources.
High bandgap energy, high breakdown field, exceptional transport properties, etc.,
make them highly suitable for being established as the potential THz base materials
[1–7]. Favorable electronic and thermal properties of those materials have already
A. Acharyya (B)
Department of Electronics and Communication Engineering, Cooch Behar Government
Engineering College, Harinchawra, Ghughumari, Cooch Behar, West Bengal 736170, India
e-mail: ari_besu@yahoo.co.in
A. Biswas
Mining Engineering Department, Centre for Organic Spin-Tronics and Optoelectronics Devices
(COSOD), Kazi Nazrul University, Asansol, Burdwan, West Bengal 713340, India
e-mail: mailarindambiswas@yahoo.co.in
B. Sarkar
R.P.B.M Jiaganj College of Engineering and Technology, Murshidabad, West Bengal, India
A. Banerjee
Department of Physics, Bidhan Chandra College, SB Gorai Road, Pathak Bari, Burdwan,
Asansol, West Bengal 713303, India
H. Inokawa
Research Institute of Electronics, Shizouka University, Shizouka, Japan
© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2021
A. Biswas et al. (eds.), Emerging Trends in Terahertz Engineering and System
Technologies, https://doi.org/10.1007/978-981-15-9766-4_4
49