30
G. Chandra Ghivela and J. Sengupta
in Emerging Trends in Terahertz Solid-State Physics and Devices , vol. 587, ed. by A. Biswas
et al. (Dec 2019), pp. 405–412
5. D. Ke-Lin, M.N.S. Swamy, in Wireless Communication Systems: From RF Subsystems to 4G
Enabling Technologies (Cambridge University Press, Cambridge, 2010), pp. 416–417
6. J.H. Chris, S.R. Balmer, Diamond as an electronic material. Mater. Today 11, 22–28 (2008)
7. G.C. Ghivela, J. Sengupta, M. Mitra, Space charge effect of IMPATT diode using Si, Ge, GaAs,
InP, WzGaN, 4H-SiC at Ka band. IETE J. Edu. 58(2), 61–66 (2017)
8. G.C. Ghivela, J. Sengupta, M. Mitra, Quantum corrected drift diffusion based noise model for
impact avalanche and transit time diode. Superlattices Microstruct. 128, 402–407 (2019)
9. G.C. Ghivela, J. Sengupta, M. Mitra, Numerical study of magnetic field effect on graphene
based IMPATT source. Superlattices Microstruct. 137, 1–7 (2020)
10. S.M. Sze, K.K. Ng, in Physics of Semiconductor Devices (Wiley, New Jersey, 2007), pp. 466–
488
11. G.C. Ghivela, J. Sengupta, Prospects of impact avalanche transit-time diode based on chemicalvapor-deposited diamond substrate. J. Electron. Mater. 48(2), 1044–1053 (2019)
12. G.C. Ghivela, J. Sengupta, Modeling and computation of double drift region transit time diode
performance based on graphene-SiC. Int. J. Numer. Model 32(5), 01–11 (2019)
13. G.C. Ghivela, J. Sengupta, M. Mitra, Ka band noise comparison for Si, Ge, GaAs, InP, WzGaN,
4H-SiC based IMPATT diode. Int. J. Electron. Lett. 7(1), 107–116 (2019)
14. G.C. Ghivela, J. Sengupta, Computation of quantum corrected noise in graphene-SiC based
impact avalanche transit time diode. Int J Numer Model.https://doi.org/10.1002/JNM.2743
15. G.C. Ghivela, P. Kumar, J. Sengupta, Numerical measurement of oscillating parameters of
IMPATT using Group-IV and Group III-V materials, inAdvances in VLSI, Communication,
and Signal Processing, ed. by D. Dutta, H. Kar, C. Kumar, V. Bhadauria. Lecture Notes in
Electrical Engineering, vol. 587 (Springer, Singapore, 2019), pp. 405–412. https://doi.org/10.
1007/978-981-32-9775-3_37
16. B. Jothe, G.C. Ghivela, J. Sengupta, Parasitic series resistance for 4H-SiC and diamond based
IMPATT diode at Ku band, in Advances in VLSI, Communication, and Signal Processing, ed.
by D. Dutta, H. Kar, C. Kumar, V. Bhadauria. Lecture Notes in Electrical Engineering, vol. 587
(Springer, Singapore, 2019), pp. 617–625. https://doi.org/10.1007/978-981-32-9775-3_56
17. P. Banerjee, A. Acharyya, A. Biswas, A.K. Bhattacharjee, Effect of magnetic field on the RF
performance of millimeter-wave IMPATT source. J. Comput. Electron. 15(1), 210–221 (2016)
18. P.K. Bandyopadhyay, S. Chakraborty, A. Biswas, A. Acharyya, A.K. Bhattacharjee, Largesignal characterization of millimeter-wave IMPATTs: effect of reduced impact ionization rate
of charge carriers due to carrier-carrier interactions. J. Comput. Electron. 15(2), 646–656 (2016)
19. P.K. Bandyopadhyay, A. Biswas, A.K. Bhattacharjee, A. Acharyya, Influence of carrier–carrier
interactions on the noise performance of millimeter-wave IMPATTs. IETE J. Res. (2018).
https://doi.org/10.1080/03772063.2018.1433078
20. A. Biswas, S. Sinha, A. Acharyya, A. Banerjee, S. Pal, H. Satoh, H. Inokawa, 1.0 THz GaN
IMPATT source: Effect of parasitic series resistance. J. Infrared Millim. Terahertz Waves
39(10), 954–974 (2018)
21. D.N. Datta, S.P. Pati, J.P. Banerjee, B.B. Pal, S.K. Roy, Computer analysis of DC field and
current density profiles of DAR Impatt Diode. IEEE Trans. On Electron Devices 29(11), 1813–
1816 (1982)
22. S.K. Roy, M. Sridharan, R. Ghosh, B.B. Pal, Computer method for the DC field and carrier
current profiles in the field extremum in the depletion layer, in NASECODEI Proceedings,
Dublin, Ireland (1982), pp. 266–274
G. Chandra Ghivela and J. Sengupta
in Emerging Trends in Terahertz Solid-State Physics and Devices , vol. 587, ed. by A. Biswas
et al. (Dec 2019), pp. 405–412
5. D. Ke-Lin, M.N.S. Swamy, in Wireless Communication Systems: From RF Subsystems to 4G
Enabling Technologies (Cambridge University Press, Cambridge, 2010), pp. 416–417
6. J.H. Chris, S.R. Balmer, Diamond as an electronic material. Mater. Today 11, 22–28 (2008)
7. G.C. Ghivela, J. Sengupta, M. Mitra, Space charge effect of IMPATT diode using Si, Ge, GaAs,
InP, WzGaN, 4H-SiC at Ka band. IETE J. Edu. 58(2), 61–66 (2017)
8. G.C. Ghivela, J. Sengupta, M. Mitra, Quantum corrected drift diffusion based noise model for
impact avalanche and transit time diode. Superlattices Microstruct. 128, 402–407 (2019)
9. G.C. Ghivela, J. Sengupta, M. Mitra, Numerical study of magnetic field effect on graphene
based IMPATT source. Superlattices Microstruct. 137, 1–7 (2020)
10. S.M. Sze, K.K. Ng, in Physics of Semiconductor Devices (Wiley, New Jersey, 2007), pp. 466–
488
11. G.C. Ghivela, J. Sengupta, Prospects of impact avalanche transit-time diode based on chemicalvapor-deposited diamond substrate. J. Electron. Mater. 48(2), 1044–1053 (2019)
12. G.C. Ghivela, J. Sengupta, Modeling and computation of double drift region transit time diode
performance based on graphene-SiC. Int. J. Numer. Model 32(5), 01–11 (2019)
13. G.C. Ghivela, J. Sengupta, M. Mitra, Ka band noise comparison for Si, Ge, GaAs, InP, WzGaN,
4H-SiC based IMPATT diode. Int. J. Electron. Lett. 7(1), 107–116 (2019)
14. G.C. Ghivela, J. Sengupta, Computation of quantum corrected noise in graphene-SiC based
impact avalanche transit time diode. Int J Numer Model.https://doi.org/10.1002/JNM.2743
15. G.C. Ghivela, P. Kumar, J. Sengupta, Numerical measurement of oscillating parameters of
IMPATT using Group-IV and Group III-V materials, inAdvances in VLSI, Communication,
and Signal Processing, ed. by D. Dutta, H. Kar, C. Kumar, V. Bhadauria. Lecture Notes in
Electrical Engineering, vol. 587 (Springer, Singapore, 2019), pp. 405–412. https://doi.org/10.
1007/978-981-32-9775-3_37
16. B. Jothe, G.C. Ghivela, J. Sengupta, Parasitic series resistance for 4H-SiC and diamond based
IMPATT diode at Ku band, in Advances in VLSI, Communication, and Signal Processing, ed.
by D. Dutta, H. Kar, C. Kumar, V. Bhadauria. Lecture Notes in Electrical Engineering, vol. 587
(Springer, Singapore, 2019), pp. 617–625. https://doi.org/10.1007/978-981-32-9775-3_56
17. P. Banerjee, A. Acharyya, A. Biswas, A.K. Bhattacharjee, Effect of magnetic field on the RF
performance of millimeter-wave IMPATT source. J. Comput. Electron. 15(1), 210–221 (2016)
18. P.K. Bandyopadhyay, S. Chakraborty, A. Biswas, A. Acharyya, A.K. Bhattacharjee, Largesignal characterization of millimeter-wave IMPATTs: effect of reduced impact ionization rate
of charge carriers due to carrier-carrier interactions. J. Comput. Electron. 15(2), 646–656 (2016)
19. P.K. Bandyopadhyay, A. Biswas, A.K. Bhattacharjee, A. Acharyya, Influence of carrier–carrier
interactions on the noise performance of millimeter-wave IMPATTs. IETE J. Res. (2018).
https://doi.org/10.1080/03772063.2018.1433078
20. A. Biswas, S. Sinha, A. Acharyya, A. Banerjee, S. Pal, H. Satoh, H. Inokawa, 1.0 THz GaN
IMPATT source: Effect of parasitic series resistance. J. Infrared Millim. Terahertz Waves
39(10), 954–974 (2018)
21. D.N. Datta, S.P. Pati, J.P. Banerjee, B.B. Pal, S.K. Roy, Computer analysis of DC field and
current density profiles of DAR Impatt Diode. IEEE Trans. On Electron Devices 29(11), 1813–
1816 (1982)
22. S.K. Roy, M. Sridharan, R. Ghosh, B.B. Pal, Computer method for the DC field and carrier
current profiles in the field extremum in the depletion layer, in NASECODEI Proceedings,
Dublin, Ireland (1982), pp. 266–274