Effects of Space Charges in IMPATT Source at Terahertz Regime
29
Table 6 Space charge effects on performance of Ge IMPATT
Frequency (in THz)
R sc
(Ohm)
V a /V d
Ratio
Disturbances in V D (×10 −13 )
01
8.768
0.207
6.103
02
8.564
0.201
6.045
04
7.792
0.189
5.844
06
7.742
0.181
5.456
08
7.723
0.174
5.427
10
7.712
0.168
4.855
12
6.995
0.162
4.561
14
6.985
0.154
4.235
16
6.953
0.145
4.209
18
6.212
0.138
3.955
20
5.552
0.131
3.887
22
5.125
0.125
3.447
24
4.523
0.112
3.128
26
4.236
0.102
2.955
28
4.122
0.098
2.775
30
4.102
0.088
2.644
4 Conclusion
The space charge effect in IMPATT was numerically analyzed in the form of disturbance in the actual electric filed profile. In this chapter, authors have studied the
space charge effects in the double drift region (DDR) IMPATT based on silicon (Si),
germanium (Ge), and gallium arsenide (GaAs) at frequency of 1 to 30 THz. Disturbances in the electric field profile and drift voltages were analyzed here with analysis
of resistances offered due to space charge effects. Since no experimental results are
available, no comparison could be made. However, these results can be helpful for
the practical realization of IMPATT.
References
1. T.A. Midford, R.L. Bernick, Millimeter wave CW IMPATT diodes and oscillators. IEEE Trans.
Microw. Theory Tech. 27(5), 483–492 (1979)
2. G.C. Ghivela, J. Sengupta, Estimation of power density in IMPATT using different materials.
Int. J. Electron. https://doi.org/10.1080/00207217.2019.1672810
3. G.C. Ghivela, J. Sengupta, Noise performance of avalanche transit-time devices in the presence
of acoustic phonons. J. Comput. Electron. 18(1), 222–230 (2019)
4. G.C. Ghivela, S.J. Mukhopadhyay, J. Sengupta, M. Mitra, Potentiality of impact avalanche
transit time diode as Terahertz source based on Group-IV and III-V semiconducting materials,
29
Table 6 Space charge effects on performance of Ge IMPATT
Frequency (in THz)
R sc
(Ohm)
V a /V d
Ratio
Disturbances in V D (×10 −13 )
01
8.768
0.207
6.103
02
8.564
0.201
6.045
04
7.792
0.189
5.844
06
7.742
0.181
5.456
08
7.723
0.174
5.427
10
7.712
0.168
4.855
12
6.995
0.162
4.561
14
6.985
0.154
4.235
16
6.953
0.145
4.209
18
6.212
0.138
3.955
20
5.552
0.131
3.887
22
5.125
0.125
3.447
24
4.523
0.112
3.128
26
4.236
0.102
2.955
28
4.122
0.098
2.775
30
4.102
0.088
2.644
4 Conclusion
The space charge effect in IMPATT was numerically analyzed in the form of disturbance in the actual electric filed profile. In this chapter, authors have studied the
space charge effects in the double drift region (DDR) IMPATT based on silicon (Si),
germanium (Ge), and gallium arsenide (GaAs) at frequency of 1 to 30 THz. Disturbances in the electric field profile and drift voltages were analyzed here with analysis
of resistances offered due to space charge effects. Since no experimental results are
available, no comparison could be made. However, these results can be helpful for
the practical realization of IMPATT.
References
1. T.A. Midford, R.L. Bernick, Millimeter wave CW IMPATT diodes and oscillators. IEEE Trans.
Microw. Theory Tech. 27(5), 483–492 (1979)
2. G.C. Ghivela, J. Sengupta, Estimation of power density in IMPATT using different materials.
Int. J. Electron. https://doi.org/10.1080/00207217.2019.1672810
3. G.C. Ghivela, J. Sengupta, Noise performance of avalanche transit-time devices in the presence
of acoustic phonons. J. Comput. Electron. 18(1), 222–230 (2019)
4. G.C. Ghivela, S.J. Mukhopadhyay, J. Sengupta, M. Mitra, Potentiality of impact avalanche
transit time diode as Terahertz source based on Group-IV and III-V semiconducting materials,