24
G. Chandra Ghivela and J. Sengupta
Fig. 1 1D model of DDR IMPATT
field profile, and drift voltages have been analyzed here with analysis of resistances
offered due to space charge effects. This study will be helpful for optimum design
of IMPATT diode at THz against space charge effects.
The space charge limited current is given by [10]
I = AqnV ns
(1)
where A and n are area and injected carrier density, V ns and q are saturation velocity
and charge of electron, respectively.
The electric field disturbance E(x) is [6, 7]
E(x) ≈ (I.x/Aε s V ns )
(2)
The disturbances in drift voltage is given by [10]
V D =
(I.x/Aε s V ns ) dx
(3)
Thus, the space charge resistance is obtained by [10]
R sc = V D /I
(4)
G. Chandra Ghivela and J. Sengupta
Fig. 1 1D model of DDR IMPATT
field profile, and drift voltages have been analyzed here with analysis of resistances
offered due to space charge effects. This study will be helpful for optimum design
of IMPATT diode at THz against space charge effects.
The space charge limited current is given by [10]
I = AqnV ns
(1)
where A and n are area and injected carrier density, V ns and q are saturation velocity
and charge of electron, respectively.
The electric field disturbance E(x) is [6, 7]
E(x) ≈ (I.x/Aε s V ns )
(2)
The disturbances in drift voltage is given by [10]
V D =
(I.x/Aε s V ns ) dx
(3)
Thus, the space charge resistance is obtained by [10]
R sc = V D /I
(4)