A Novel Integrated Power Module with Solid-State …
21
The input impedance of the antenna with the feed point located along the radius
at ϕ = 0, which is the case for this integrated power module, is given by [19]:
Z in (r ) =
1
G
.
J
2
n (k, r )
J 2
n (k, a)
(37)
where the sum of equivalent conductance due to the radiation, dielectric and ohmic
losses represents the total conductance G.
6 Conclusion
A new concept and the possible way to realize it has been given for a novel integrated power module with solid-state diode (IMPATT device) at THz frequency.
The analytical model equations have been provided for the resonant–cap circuit,
the oscillator (on the basis of device-circuit interaction) and that of the improvised
microstrip antenna; of which the power module is made of as an integrated and
size-miniaturized structure. With this novel physical and analytically modelled idea,
the integrated power module structure can be further characterized with simulation
studies and may be finally designed and fabricated to evaluate its performance experimentally. When this idea is translated to reality, the integrated power module at THz
frequency is expected to be a unique power module structure which might find
useful applications in THz communication including concealed weapon detection
and standoff detection of explosives and abusive drugs for security purposes and
also in applications not yet dreamt of.
Acknowledgements I am sincerely thankful to Mr. Amitesh Kumar, Scientist of SAMEER Kolkata
Centre, India, for helping me to draw professionally all the diagrams presented in this chapter. I am
also thankful to Prof. Hiroshi Inokawa of Research Institute of Electronics, Shizuoka University,
Japan, for his illuminating suggestions regarding THz IMPATT diode. Finally, I would like to thank
Dr. Arindam Biswas of Kazi Nazrul University, India, and Dr. Aritra Acharyya of Cooch Behar
Govt. Engineering College, India, for having fruitful discussion on many issues related to this
chapter.
References
1. P.H. Siegel, Terahertz technology. IEEE Trans. MTT 50(3), 910–928 (2002)
2. J.F. Federici, D. Gary, R. Barat, Z.H. Michalopoulou, T-Rays vs Terrorists, in IEEE Spectrum,
July 2007, pp 39–44
3. A.G. Davies, A.D. Burnett, W. Fan, E.H. Linfield, J.E. Cunningham, Terahertz spectroscopy
of explosives and drugs. Mater. Today 11(3), 18–26 (2008)
4. J.F. Federici, B. Schulkin, F. Huang, D. Gary, R. Barat, F. Oliveira, D. Zimdars, THz imaging
and sensing for security applications—explosives, weapons and drugs. Semicond. Sci. Technol.
20, 266–280 (2005). https://doi.org/10.1088/0268-1242/20/7/018
21
The input impedance of the antenna with the feed point located along the radius
at ϕ = 0, which is the case for this integrated power module, is given by [19]:
Z in (r ) =
1
G
.
J
2
n (k, r )
J 2
n (k, a)
(37)
where the sum of equivalent conductance due to the radiation, dielectric and ohmic
losses represents the total conductance G.
6 Conclusion
A new concept and the possible way to realize it has been given for a novel integrated power module with solid-state diode (IMPATT device) at THz frequency.
The analytical model equations have been provided for the resonant–cap circuit,
the oscillator (on the basis of device-circuit interaction) and that of the improvised
microstrip antenna; of which the power module is made of as an integrated and
size-miniaturized structure. With this novel physical and analytically modelled idea,
the integrated power module structure can be further characterized with simulation
studies and may be finally designed and fabricated to evaluate its performance experimentally. When this idea is translated to reality, the integrated power module at THz
frequency is expected to be a unique power module structure which might find
useful applications in THz communication including concealed weapon detection
and standoff detection of explosives and abusive drugs for security purposes and
also in applications not yet dreamt of.
Acknowledgements I am sincerely thankful to Mr. Amitesh Kumar, Scientist of SAMEER Kolkata
Centre, India, for helping me to draw professionally all the diagrams presented in this chapter. I am
also thankful to Prof. Hiroshi Inokawa of Research Institute of Electronics, Shizuoka University,
Japan, for his illuminating suggestions regarding THz IMPATT diode. Finally, I would like to thank
Dr. Arindam Biswas of Kazi Nazrul University, India, and Dr. Aritra Acharyya of Cooch Behar
Govt. Engineering College, India, for having fruitful discussion on many issues related to this
chapter.
References
1. P.H. Siegel, Terahertz technology. IEEE Trans. MTT 50(3), 910–928 (2002)
2. J.F. Federici, D. Gary, R. Barat, Z.H. Michalopoulou, T-Rays vs Terrorists, in IEEE Spectrum,
July 2007, pp 39–44
3. A.G. Davies, A.D. Burnett, W. Fan, E.H. Linfield, J.E. Cunningham, Terahertz spectroscopy
of explosives and drugs. Mater. Today 11(3), 18–26 (2008)
4. J.F. Federici, B. Schulkin, F. Huang, D. Gary, R. Barat, F. Oliveira, D. Zimdars, THz imaging
and sensing for security applications—explosives, weapons and drugs. Semicond. Sci. Technol.
20, 266–280 (2005). https://doi.org/10.1088/0268-1242/20/7/018