108
R. Paul et al.
contributions at once reveals the fact that they have formulated the CS by deriving
the electron energy spectra to investigate the transport and other properties of lowdimensional electronic devices made of various compound materials although they
have not at all given graphical analyses and related discussions of the CS which can
generate new physics in this context. From the recent literature [81–114], we realize
that the low-dimensional quantum confined materials not only unlocks new scientific concepts but also their extensive multidimensional applications in the quantum
zone including quantum sensors, quantum wells, wires, dots, superlattice coolers,
resonant tunneling diodes, quantized transistors and other nano-scale devices.
The impact of CS is well-known since the inception of semiconductors and related
sciences and also since CS is connected with 28 vital band structure-dependent
quantities of nano-devices and also since it is, in turn, being directly related with
the exact formulation of the dispersion relations. In this chapter, we study the CS in
different technologically important semiconductors and their quantized counter parts
in the presence of magnetic quantization, cross-fields configuration, quantum wells,
nano wires, etc. It is nice to observe how photons (for opto-electronic devices) and
strong electric field in ultra-short modern devices of low-dimensional electronics
affect the Fermi energy. In what follows we shall study the influence of carrier
degeneracy, film thickness, quantizing magnetic field, electric field, light intensity,
wave length and alloy composition on the Fermi energy, respectively, in III–V, ternary,
quaternary and non-linear optical compounds, respectively.
2 Results and Discussion
We have numerically computed the variations of doping, alloy composition, inverse
quantizing magnetic field (1/B), electric field, film thickness, cross-fields quantization, light intensity and wave length dependences of ternary, quaternary and nonlinear
optical materials together with their quantized counter parts (i.e., quantum wells and
quantum wires) on the Fermi energy (denoted by Ω)which are being reflected in 46
figures. From this figures, we can very briefly infer the followings:
1. The Ω increases with increasing carrier degeneracy.
2. The Ω increases with decreasing with alloy composition.
3. The quantum signature of (B)
−1 on Ω is being reflected through SdH effect.
4. Under cross-field configuration, the Ω also oscillates with 1/B and crossed
electric field E 0 alters the numerical magnitudes.
5. The Ω increases with increasing carrier degeneracy and decreasing d z in
different oscillatory fashion in quantum wells.
6. In quantum wires, the oscillations are more pronounced due to 2D quantizations
of the electron wave vector leading to 1D motion.
7. In the presence of electric field, the Ω exhibits more enhanced oscillations with
respect to carrier degeneracy and film thickness for quantum wells and quantum
wires.
R. Paul et al.
contributions at once reveals the fact that they have formulated the CS by deriving
the electron energy spectra to investigate the transport and other properties of lowdimensional electronic devices made of various compound materials although they
have not at all given graphical analyses and related discussions of the CS which can
generate new physics in this context. From the recent literature [81–114], we realize
that the low-dimensional quantum confined materials not only unlocks new scientific concepts but also their extensive multidimensional applications in the quantum
zone including quantum sensors, quantum wells, wires, dots, superlattice coolers,
resonant tunneling diodes, quantized transistors and other nano-scale devices.
The impact of CS is well-known since the inception of semiconductors and related
sciences and also since CS is connected with 28 vital band structure-dependent
quantities of nano-devices and also since it is, in turn, being directly related with
the exact formulation of the dispersion relations. In this chapter, we study the CS in
different technologically important semiconductors and their quantized counter parts
in the presence of magnetic quantization, cross-fields configuration, quantum wells,
nano wires, etc. It is nice to observe how photons (for opto-electronic devices) and
strong electric field in ultra-short modern devices of low-dimensional electronics
affect the Fermi energy. In what follows we shall study the influence of carrier
degeneracy, film thickness, quantizing magnetic field, electric field, light intensity,
wave length and alloy composition on the Fermi energy, respectively, in III–V, ternary,
quaternary and non-linear optical compounds, respectively.
2 Results and Discussion
We have numerically computed the variations of doping, alloy composition, inverse
quantizing magnetic field (1/B), electric field, film thickness, cross-fields quantization, light intensity and wave length dependences of ternary, quaternary and nonlinear
optical materials together with their quantized counter parts (i.e., quantum wells and
quantum wires) on the Fermi energy (denoted by Ω)which are being reflected in 46
figures. From this figures, we can very briefly infer the followings:
1. The Ω increases with increasing carrier degeneracy.
2. The Ω increases with decreasing with alloy composition.
3. The quantum signature of (B)
−1 on Ω is being reflected through SdH effect.
4. Under cross-field configuration, the Ω also oscillates with 1/B and crossed
electric field E 0 alters the numerical magnitudes.
5. The Ω increases with increasing carrier degeneracy and decreasing d z in
different oscillatory fashion in quantum wells.
6. In quantum wires, the oscillations are more pronounced due to 2D quantizations
of the electron wave vector leading to 1D motion.
7. In the presence of electric field, the Ω exhibits more enhanced oscillations with
respect to carrier degeneracy and film thickness for quantum wells and quantum
wires.