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1 Introduction
1.2 Nobel Prize Winners
Several Nobel Prizes
18 have been awarded for discoveries and inventions in the field of semiconductor
physics (Fig. 1.15).
1909
Karl Ferdinand Braun
‘in recognition of his contributions to the development of wireless telegraphy’
1914
Max von Laue ‘for his discovery of the diffraction of X-rays by crystals’
1915
Sir William Henry Bragg
William Lawrence Bragg
‘for their services in the analysis of crystal structure by means of X-rays’
1946
Percy Williams Bridgman
‘for the invention of an apparatus to produce extremely high pressures, and for the discoveries he made
therewith in the field of high pressure physics’
1953
William Bradford Shockley
John Bardeen
Walter Houser Brattain
‘for their researches on semiconductors and their discovery of the transistor effect’
1973
Leo Esaki
‘for his experimental discoveries regarding tunneling phenomena in semiconductors’
1985
Klaus von Klitzing
‘for the discovery of the quantized Hall effect’
1998
Robert B. Laughlin
Horst L. Störmer
Daniel C. Tsui
‘for their discovery of a new form of quantum fluid with fractionally charged excitations’
2000
Zhores I. Alferov
Herbert Kroemer
‘for developing semiconductor heterostructures used in high-speed and optoelectronics’
Jack St. Clair Kilby
‘for his part in the invention of the integrated circuit’
2009
Willard S. Boyle
George E. Smith
‘for the invention of an imaging semiconductor circuit—the CCD sensor’
18 www.nobel.se