6
1 Introduction
(a)
(b)
Fig. 1.7 a Optical image of directionally solidified silicon. The lower part contains predominantly boron, the upper
part contains predominantly phosphorous. First the growth is porous and subsequently columnar. Adapted from [90].
b Spectral response of silicon pn-junction photoelement, 1940. The inset depicts schematically a Si slab with built-in
pn-junction formed during directed solidification as shown in panel (a). The arrow denotes the direction of solidification
(cmp. Fig. 4.6). Adapted from [89]
A.H. Wilson
10 —development of band-structure theory [74, 75].
1933
C. Wagner—excess (‘Elektronenüberschuss-Leitung’, n-type) and defect (‘Elektronen-Defektleitung’,
p-type) conduction [76–79]. Anion deficiency in ZnO causes conducting behavior [80].
1934
C. Zener—Zener tunneling [81].
1936
J. Frenkel—description of excitons [82].
1938
B. Davydov—theoretical prediction of rectification at pn-junction [83] and in Cu 2 O [84].
W. Schottky—theory of the boundary layer in metal–semiconductor contacts [85], being the basis for
Schottky contacts and field-effect transistors.
N.F. Mott—metal–semiconductor rectifier theory [86, 87].
R. Hilsch and R.W. Pohl—three-electrode crystal (KBr) [88].
1940
R.S. Ohl—Silicon-based photoeffect (solar cell, Fig. 1.7) [89] from a pn-junction formed within a slab
of polycrystalline Si fabricated with directed solidification due to different distribution coefficients of
p- and n-dopants (boron and phosphorus, cmp. Fig. 4.6b) (J. Scaff and H. Theurer) [90, 91].
10 Wilson was theoretical physicist in Cambridge, who spent a sabbatical with Heisenberg in Leipzig and applied the
brand new field of quantum mechanics to issues of electrical conduction, first in metals and then in semiconductors.
When he returned to Cambridge, Wilson urged that attention be paid to germanium but, as he expressed it long afterward,
’the silence was deafening’ in response. He was told that devoting attention to semiconductors, those messy entities,
was likely to blight his career among physicists. He ignored these warnings and in 1939 brought out his famous book
’Semiconductors and Metals’ [72] which explained semiconductor properties, including the much-doubted phenomenon
of intrinsic semiconductivity, in terms of electronic energy bands. His academic career seems indeed to have been
blighted, because despite his great intellectual distinction, he was not promoted in Cambridge (he remained an assistant
professor year after year) [73]. Compare the remark of W. Pauli (p. 179)
1 Introduction
(a)
(b)
Fig. 1.7 a Optical image of directionally solidified silicon. The lower part contains predominantly boron, the upper
part contains predominantly phosphorous. First the growth is porous and subsequently columnar. Adapted from [90].
b Spectral response of silicon pn-junction photoelement, 1940. The inset depicts schematically a Si slab with built-in
pn-junction formed during directed solidification as shown in panel (a). The arrow denotes the direction of solidification
(cmp. Fig. 4.6). Adapted from [89]
A.H. Wilson
10 —development of band-structure theory [74, 75].
1933
C. Wagner—excess (‘Elektronenüberschuss-Leitung’, n-type) and defect (‘Elektronen-Defektleitung’,
p-type) conduction [76–79]. Anion deficiency in ZnO causes conducting behavior [80].
1934
C. Zener—Zener tunneling [81].
1936
J. Frenkel—description of excitons [82].
1938
B. Davydov—theoretical prediction of rectification at pn-junction [83] and in Cu 2 O [84].
W. Schottky—theory of the boundary layer in metal–semiconductor contacts [85], being the basis for
Schottky contacts and field-effect transistors.
N.F. Mott—metal–semiconductor rectifier theory [86, 87].
R. Hilsch and R.W. Pohl—three-electrode crystal (KBr) [88].
1940
R.S. Ohl—Silicon-based photoeffect (solar cell, Fig. 1.7) [89] from a pn-junction formed within a slab
of polycrystalline Si fabricated with directed solidification due to different distribution coefficients of
p- and n-dopants (boron and phosphorus, cmp. Fig. 4.6b) (J. Scaff and H. Theurer) [90, 91].
10 Wilson was theoretical physicist in Cambridge, who spent a sabbatical with Heisenberg in Leipzig and applied the
brand new field of quantum mechanics to issues of electrical conduction, first in metals and then in semiconductors.
When he returned to Cambridge, Wilson urged that attention be paid to germanium but, as he expressed it long afterward,
’the silence was deafening’ in response. He was told that devoting attention to semiconductors, those messy entities,
was likely to blight his career among physicists. He ignored these warnings and in 1939 brought out his famous book
’Semiconductors and Metals’ [72] which explained semiconductor properties, including the much-doubted phenomenon
of intrinsic semiconductivity, in terms of electronic energy bands. His academic career seems indeed to have been
blighted, because despite his great intellectual distinction, he was not promoted in Cambridge (he remained an assistant
professor year after year) [73]. Compare the remark of W. Pauli (p. 179)