4
1 Introduction
Fig. 1.3 Laue images of ’regular’ (cubic) ZnS along three major crystallographic directions, directly visualizing their
4-, 3- and 2-fold symmetry. Adapted from [48]
Fig. 1.4 Sketch of a
field-effect transistor, 1926.
From [53]
1911
The term ‘Halbleiter’ (semiconductor) is introduced for the first time by J. Weiss [46] and J. Königsberger and J. Weiss [47]. Königsberger preferred the term ‘Variabler Leiter’ (variable conductor).
1912
M. von Laue—X-ray diffraction of bulk crystals including ZnS (Fig. 1.3) [48, 49].
1925
J.E. Lilienfeld
6 —proposal of the metal-semiconductor field-effect transistor (MESFET) [53], with
suggested copper sulfide thin film channel and aluminum gate.
7 (Fig. 1.4). Lilienfeld was also awarded
patents for a depletion mode MOSFET [55] with proposed copper sulfide, copper oxide or lead oxide
channel and current amplification with nppn- and pnnp-transistors [56]. Due to the lack of other
publications of Lilienfeld on transistors, it is under discussion whether Lilienfeld just patented ideas
or also build working devices with mounting evidence for the latter [51, 54, 57].
1927
A. Schleede, H. Buggisch—synthesis of pure, stoichiometric PbS, influence of sulphur excess and
impurities [58].
A. Schleede, E. Körner—activation of luminescence of ZnS [59, 60].
6 After obtaining his PhD in 1905 from the Friedrich-Wilhelms-Universität Berlin, Julius Edgar Lilienfeld joined the
Physics Department of Universität Leipzig and worked on gas liquefaction and with Lord Zeppelin on hydrogen-filled
blimps. In 1910 he became professor at the Universität Leipzig where he mainly researched on X-rays and vacuum tubes
[50]. To the surprise of his colleagues he left in 1926 to join a US industrial laboratory [51, 52].
7 In [51] it is suggested that the device works as a npn transistor, in [54] it is suggested to be a JFET.
1 Introduction
Fig. 1.3 Laue images of ’regular’ (cubic) ZnS along three major crystallographic directions, directly visualizing their
4-, 3- and 2-fold symmetry. Adapted from [48]
Fig. 1.4 Sketch of a
field-effect transistor, 1926.
From [53]
1911
The term ‘Halbleiter’ (semiconductor) is introduced for the first time by J. Weiss [46] and J. Königsberger and J. Weiss [47]. Königsberger preferred the term ‘Variabler Leiter’ (variable conductor).
1912
M. von Laue—X-ray diffraction of bulk crystals including ZnS (Fig. 1.3) [48, 49].
1925
J.E. Lilienfeld
6 —proposal of the metal-semiconductor field-effect transistor (MESFET) [53], with
suggested copper sulfide thin film channel and aluminum gate.
7 (Fig. 1.4). Lilienfeld was also awarded
patents for a depletion mode MOSFET [55] with proposed copper sulfide, copper oxide or lead oxide
channel and current amplification with nppn- and pnnp-transistors [56]. Due to the lack of other
publications of Lilienfeld on transistors, it is under discussion whether Lilienfeld just patented ideas
or also build working devices with mounting evidence for the latter [51, 54, 57].
1927
A. Schleede, H. Buggisch—synthesis of pure, stoichiometric PbS, influence of sulphur excess and
impurities [58].
A. Schleede, E. Körner—activation of luminescence of ZnS [59, 60].
6 After obtaining his PhD in 1905 from the Friedrich-Wilhelms-Universität Berlin, Julius Edgar Lilienfeld joined the
Physics Department of Universität Leipzig and worked on gas liquefaction and with Lord Zeppelin on hydrogen-filled
blimps. In 1910 he became professor at the Universität Leipzig where he mainly researched on X-rays and vacuum tubes
[50]. To the surprise of his colleagues he left in 1926 to join a US industrial laboratory [51, 52].
7 In [51] it is suggested that the device works as a npn transistor, in [54] it is suggested to be a JFET.