FPA
Focal plane array
FQHE
Fractional quantum Hall effect
FWHM
Full width at half-maximum
FZ
Float-zone (growth)
Gb
Gigabit
GIZO
GaInZnO
GLAD
Glancing-angle deposition
GRINSCH
Graded-index separate confinement heterostructure
GSMBE
Gas-source molecular beam epitaxy
GST
Ge 2 Sb 2 Te 5
HBL
Hole blocking layer
HBT
Heterobipolar transistor
hcp
Hexagonally close packed
HCSEL
Horizontal cavity surface-emitting laser
HEMT
High electron mobility transistor
HIGFET
Heterojunction insulating gate FET
hh
Heavy hole
HIL
Hole injection layer
HJFET
Heterojunction FET
HMM
Hyperbolic metamaterial
HOMO
Highest occupied molecular orbital
HOPG
Highly ordered pyrolithic graphite
HR
High reflection
HRTEM
High-resolution transmission electron microscopy
HTL
Hole transport layer
HWHM
Half-width at half-maximum
IBM
International Business Machines Corporation
IC
Integrated circuit
IDB
Inversion domain boundary
IE
Ionization energy
IEEE
Institute of Electrical and Electronics Engineers
1
IF
Intermediate frequency
IOP
Institute of Physics
IPAP
Institute of Pure and Applied Physics, Tokyo
IQHE
Integral quantum Hall effect
IR
Infrared
ISF
Intrinsic stacking fault
ITO
Indium tin oxide
JDOS
Joint density of states
JFET
Junction field-effect transistor
KKR
Kramers–Kronig relation
KOH
Potassium hydroxide
KTP
KTiOPO 4 material
LA
Longitudinal acoustic (phonon)
LCD
Liquid crystal display
LDA
Local density approximation
LEC
Liquid encapsulated Czochralski (growth)
LED
Light-emitting diode
1
pronounced Eye-triple-E.
Abbreviations
xxv