CL
Cathodoluminescence
CMOS
Complementary metal–oxide–semiconductor
CMY
Cyan-magenta-yellow (color system)
CNL
Charge neutrality level
CNT
Carbon nanotube
COD
Catastrophical optical damage
CPU
Central processing unit
CRT
Cathode ray tube
CSL
Coincident site lattice
CVD
Chemical vapor deposition
cw
Continuous wave
CZ
Czochralski (growth)
DAP
Donor–acceptor pair
DBR
Distributed Bragg reflector
dc
Direct current
DF
Dielectric function
DFB
Distributed feedback
DH(S)
Double heterostructure
DLTS
Deep level transient spectroscopy
DMS
Diluted magnetic semiconductor
DOS
Density of states
DPSS
Diode-pumped solid-state (laser)
DRAM
Dynamic random access memory
DVD
Digital versatile disc
EA
Electron affinity
EBL
Electron blocking layer
EEPROM
Electrically erasable programmable read-only memory
EHL
Electron–hole liquid
EIL
Electron injection layer
EL
Electroluminescence
ELA
Excimer laser annealing
ELO
Epitaxial lateral overgrowth
EMA
Effective mass approximation
EML
Emission layer
EPR
Electron paramagnetic resonance
EPROM
Erasable programmable read-only memory
ESF
Extrinsic stacking fault
ESR
Electron spin resonance
ETL
Electron transport layer
EXAFS
Extended X-ray absorption fine structure
F 4 -TCNQ
2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane
FA
Formamidinium, HC(NH 2 ) 2
fc
Face-centered
fcc
Face-centered cubic
FeRAM
Ferroelectric random access memory
FET
Field-effect transistor
FIB
Focused ion beam
FIR
Far infrared
FKO
Franz–Keldysh oscillation
FLG
Few layer graphene
xxiv
Abbreviations