4.3 Dislocations
87
(a)
(b)
Fig. 4.22 a Etch rate of silicon for tetramethyl-ammonium-hydroxide (TMAH) water solution (25%) at 86 ◦ C and 40%
KOH at 70 ◦ C as a function of crystallographic direction. b Detail of the anisotropy around the (111) direction for TMAH
solutions with three different concentrations and 40% KOH, all at 86 ◦ C. Adapted from [329]
Fig. 4.23 Etch pits on germanium with (a) (001) and (b) (111) surface orientation. In both cases {111} facets are prepared
by the etch. As etch in (b) a HNO 3 /HF/CH 3 COOH solution with AgNO 3 additive has been used. Width of the triangular
etch pits is about 100 µm. Adapted from [334]
Fig. 4.24 Etch pits on GaAs (001) after a 3 min and b 10 min etch time in molten KOH at 300 ◦ C. Adapted from [330]
87
(a)
(b)
Fig. 4.22 a Etch rate of silicon for tetramethyl-ammonium-hydroxide (TMAH) water solution (25%) at 86 ◦ C and 40%
KOH at 70 ◦ C as a function of crystallographic direction. b Detail of the anisotropy around the (111) direction for TMAH
solutions with three different concentrations and 40% KOH, all at 86 ◦ C. Adapted from [329]
Fig. 4.23 Etch pits on germanium with (a) (001) and (b) (111) surface orientation. In both cases {111} facets are prepared
by the etch. As etch in (b) a HNO 3 /HF/CH 3 COOH solution with AgNO 3 additive has been used. Width of the triangular
etch pits is about 100 µm. Adapted from [334]
Fig. 4.24 Etch pits on GaAs (001) after a 3 min and b 10 min etch time in molten KOH at 300 ◦ C. Adapted from [330]