86
4 Structural Defects
(a)
(b)
Fig. 4.20 a Graphical representation of the dislocation reaction of (4.22). b TEM image of the interface of a Ge/Si
heterostructure with a
¯
211
/6 Shockley partial dislocation. The image is overlayed with empty rod positions (as
schematically shown in the lower left part of the figure) colored according to the stacking position (A: blue, B: red, C:
green). The arrows labeled ‘I’ denote the position of the interface. Based on [327]
at a dislocation with Burger’s vector a/2 [011] (inclined to the (001) surface) [332]. Other types of
etch pits indicate dislocations with other Burger’s vectors [332, 333]. Recipies how to wet chemically
etch various semiconductors can be found in [328, 334–337]. Other etching techniques include dry
processes such as plasma etching or reactive ion etching (RIE) [338–341].
Fig. 4.21 a Resulting shape of Si sphere (‘Lösungskörper’) after 3 h at 100 ◦ C in molten KOH. b Resulting shape of
Ge sphere after etching in HNO 3 :HF:CH 3 COOH, 35:30:35 weight percent. The octaedric form indicates {111} faces.
Markers are 1 mm. Adapted from [328]
4 Structural Defects
(a)
(b)
Fig. 4.20 a Graphical representation of the dislocation reaction of (4.22). b TEM image of the interface of a Ge/Si
heterostructure with a
¯
211
/6 Shockley partial dislocation. The image is overlayed with empty rod positions (as
schematically shown in the lower left part of the figure) colored according to the stacking position (A: blue, B: red, C:
green). The arrows labeled ‘I’ denote the position of the interface. Based on [327]
at a dislocation with Burger’s vector a/2 [011] (inclined to the (001) surface) [332]. Other types of
etch pits indicate dislocations with other Burger’s vectors [332, 333]. Recipies how to wet chemically
etch various semiconductors can be found in [328, 334–337]. Other etching techniques include dry
processes such as plasma etching or reactive ion etching (RIE) [338–341].
Fig. 4.21 a Resulting shape of Si sphere (‘Lösungskörper’) after 3 h at 100 ◦ C in molten KOH. b Resulting shape of
Ge sphere after etching in HNO 3 :HF:CH 3 COOH, 35:30:35 weight percent. The octaedric form indicates {111} faces.
Markers are 1 mm. Adapted from [328]