10.2 Historical Advancement and Development of Spintronic Devices
227
Table 10.1 Historical developments in spintronics phenomena and devices
Data taken from Atsufumi Hirohata et al. (Hirohataa and Yamadab 2020)
• 2017 saw the experimental demonstration of single-pulse all-optical switching in
Pt/Co/Gd stacks using linearly polarized laser pulses. Spin Nernst effect was also
observed in this year.
Spintronic devices
Spintronics devices can broadly be classified into two types (i) Mott-type and (ii)
Dirac type. This classification is done on the basis of electron/hole spins as well
as spin waves and spin/orbit moments. Figure 10.2 shows an outline of spintronic
devices. Fundamental phenomenon involved in Mott-type devices is giant magnetoresistance and tunnel magnetoresistance, while the essential phenomena associated with Dirac-type devices are SOT. These devices can also be categorized into
three generations. The first generation is based on electrical spin generation and spin
227
Table 10.1 Historical developments in spintronics phenomena and devices
Data taken from Atsufumi Hirohata et al. (Hirohataa and Yamadab 2020)
• 2017 saw the experimental demonstration of single-pulse all-optical switching in
Pt/Co/Gd stacks using linearly polarized laser pulses. Spin Nernst effect was also
observed in this year.
Spintronic devices
Spintronics devices can broadly be classified into two types (i) Mott-type and (ii)
Dirac type. This classification is done on the basis of electron/hole spins as well
as spin waves and spin/orbit moments. Figure 10.2 shows an outline of spintronic
devices. Fundamental phenomenon involved in Mott-type devices is giant magnetoresistance and tunnel magnetoresistance, while the essential phenomena associated with Dirac-type devices are SOT. These devices can also be categorized into
three generations. The first generation is based on electrical spin generation and spin