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9 Semiconductor Spintronics
9.6 Exercises
Q.1. Mention some vital and important requirements needs to be fulfilled for the
development of practical semiconductor spintronic devices. Also explain
why the achievement of efficient electrical spin injection is complex in
semiconductor?
Q.2. Explain several methods for achieving formation, injection and detection of
spin in semiconductors.
Q.3. The combination of MnAs metal and GaAs semiconductor may be a good
choice for semiconductor heterojunction spintronic devices: Comment on
it.
Q.4. What are diluted magnetic semiconductors (DMS)? Why are they so
important in semiconductor spintronics industry?
Q.5. Write down some peculiar property of Mn that makes them so essential in semiconductor spintronics. What are the uses of wide band gap
semiconductor?
Q.6. What do you mean by three terminal semiconductor spintronics device?
Name some of the devices and compare their characteristic features.
Q.7. Designing of spin-polarized light sources needs some general considerations: Give views.
Q.8. What is spin LED? Summarize the different types of spin LED. Briefly
discuss different detection geometries for spin LEDS with the help of
schematic representation. Compare the performances of GaAs-based spin
LED and Ge-based spin LED.
Q.9. What is RTD and how does it work? What types of material are used to
fabricate RTD?
Q.10. In which respect spin laser differs from conventional laser? Explain the
construction and working principle of spin laser with spin bucket model.
References
P. Bortolotti, Opportunities and challenges for spintronics in the microelectronics industry. Nat.
Electron. 3, 446–459 (2020)
S. De Cesari, E. Vitiello, A. Giorgioni, F. Pezzoli, Progress towards spin-based light emission in
group IV semiconductors. Electronics 6, 19 (2017)
J. Frougier, Toward Spin-LED and Spin-VECSEL Operations at Magnetic Remanence (Université
Paris Sud, Paris XI, 2014). Other[cond-mat.other]. English. NNT: 2014PA112175, https://tel.arc
hives-ouvertes.fr/tel-01127040
A. Hirohata, K. Takanashi, Future perspectives for spintronic devices. J. Phys. D Appl. Phys. 47,
193001 (2014)
A. Hirohataa, K. Yamadab et al., Review on spintronics: principles and device applications. J. Magn.
Magn. Mater. 509 (2020)
https://physicsworld.com/a/the-spintronics-challenge/
https://nptel.ac.in/courses/115/103/115103039/
9 Semiconductor Spintronics
9.6 Exercises
Q.1. Mention some vital and important requirements needs to be fulfilled for the
development of practical semiconductor spintronic devices. Also explain
why the achievement of efficient electrical spin injection is complex in
semiconductor?
Q.2. Explain several methods for achieving formation, injection and detection of
spin in semiconductors.
Q.3. The combination of MnAs metal and GaAs semiconductor may be a good
choice for semiconductor heterojunction spintronic devices: Comment on
it.
Q.4. What are diluted magnetic semiconductors (DMS)? Why are they so
important in semiconductor spintronics industry?
Q.5. Write down some peculiar property of Mn that makes them so essential in semiconductor spintronics. What are the uses of wide band gap
semiconductor?
Q.6. What do you mean by three terminal semiconductor spintronics device?
Name some of the devices and compare their characteristic features.
Q.7. Designing of spin-polarized light sources needs some general considerations: Give views.
Q.8. What is spin LED? Summarize the different types of spin LED. Briefly
discuss different detection geometries for spin LEDS with the help of
schematic representation. Compare the performances of GaAs-based spin
LED and Ge-based spin LED.
Q.9. What is RTD and how does it work? What types of material are used to
fabricate RTD?
Q.10. In which respect spin laser differs from conventional laser? Explain the
construction and working principle of spin laser with spin bucket model.
References
P. Bortolotti, Opportunities and challenges for spintronics in the microelectronics industry. Nat.
Electron. 3, 446–459 (2020)
S. De Cesari, E. Vitiello, A. Giorgioni, F. Pezzoli, Progress towards spin-based light emission in
group IV semiconductors. Electronics 6, 19 (2017)
J. Frougier, Toward Spin-LED and Spin-VECSEL Operations at Magnetic Remanence (Université
Paris Sud, Paris XI, 2014). Other[cond-mat.other]. English. NNT: 2014PA112175, https://tel.arc
hives-ouvertes.fr/tel-01127040
A. Hirohata, K. Takanashi, Future perspectives for spintronic devices. J. Phys. D Appl. Phys. 47,
193001 (2014)
A. Hirohataa, K. Yamadab et al., Review on spintronics: principles and device applications. J. Magn.
Magn. Mater. 509 (2020)
https://physicsworld.com/a/the-spintronics-challenge/
https://nptel.ac.in/courses/115/103/115103039/