9.4 Spin-Polarized Semiconductor Devices
215
Fig. 9.11 Schematic representations of a three terminal and b four terminal devices c Ge-based
spin LED (Figure taken from De Cesari et al. 2017.)
Fig. 9.12 Schematic representation of the energy profile of a double barrier tunnel diode with a
single energy level in the quantum well (Figure adapted and redrawn fro S´anchez et al. 2007.)
semiconductors, particularly with high Curie temperature can eliminate these limitations. Materials of renewed interests are GaMnAs or GaMnN. Ferromagnetic RTD
based on GaMnAs demonstrates spin splitting without external magnetic field but
it still its function limited to very low temperature. However, GaMnN has shown
evidence of the ferromagnetic properties above room temperature.
215
Fig. 9.11 Schematic representations of a three terminal and b four terminal devices c Ge-based
spin LED (Figure taken from De Cesari et al. 2017.)
Fig. 9.12 Schematic representation of the energy profile of a double barrier tunnel diode with a
single energy level in the quantum well (Figure adapted and redrawn fro S´anchez et al. 2007.)
semiconductors, particularly with high Curie temperature can eliminate these limitations. Materials of renewed interests are GaMnAs or GaMnN. Ferromagnetic RTD
based on GaMnAs demonstrates spin splitting without external magnetic field but
it still its function limited to very low temperature. However, GaMnN has shown
evidence of the ferromagnetic properties above room temperature.