514
Y. Yoshida
63. Y. Yoshida, Y. Kobayashi, K. Hayakawa, K. Yukihira, J. Nakamura, S. Nasu, E. Yagi, F. Ambe,
In-beam Mössbauer study on 57 Fe jumps in solid Ar and Solid Xe after coulomb-excitation
and recoil-implantation. RIKEN Rev. 16, 19–20 (1997)
64. Y. Yoshida, Mössbauer spectroscopy to investigate atomistic jump processes on an atomistic
scale. Hyperfine Interact 113, 183–198 (1998)
65. R. Sielemann, Y. Kobayashi, Y. Yoshida, H.P. Gunnlaugsson, G. Weyer, Magnetism at single
isolated iron atoms implanted in graphite. Phys. Rev. Lett. 101, 137206 (2008)
66. G. Vogl, W. Mansel, P.H. Dederichs, Plys. Rev. Lett. 36, 1497 (1976)
67. W. Petry, G. Vogl, W. Mansel, Phys. Rev. Lett. 45, 1862 (1980)
68. H.J. Blythe, H. Kronmuller, A. Seeger, F. Walz, Phys. Stat. Sol. (a) 181, 233, (2000)
69. J. Christiansen, E. Recknagel, G. Weyer, Phys. Rev. Lett. 20, 46 (1966)
70. Y. Yoshida, Y. Kobayashi, F. Ambe, E. Yagi, A. Seeger et al., Direct observation of selfinterstitial motion in pure iron by 56 Fe (d, p) 5 7Fe In-beam mössbauer spectroscopy. Defect
Diffus Forum 194–199, 29–34 (2001)
71. A.A. Istratov, H. Hieslmair, E.R Weber, Iron and its complexes in silicon. Appl. Phys. A
69 (1999) 13–44; A.A. Istratov, H. Hieslmair, E.R Weber, Iron contamination in silicon
technology Appl. Phys. A 70, 489–534 (2000)
72. Y. Yoshida, Direct Observation of Substitutional and Interstitial Fe atoms in Si by hightemperature and In-beam Mössbauer Spectroscopy, ALTECH 2003, ECS, (Salt Lake City,
US, 479–482, 2003)
73. Y. Yoshida, Y. Kobayashi, K. Hayakawa, K. Yukihira, F. Shimura, A. Yoshida, X. Diao,
H. Ogawa, Y. Yano, F. Ambe, In-beam Mössbauer study on interstitial and substitutional
57 Mn/ 57 Fe jumps in Si. Defect Diffus Forum 194–199, 611–616 (2001)
74. Y. Yoshida, Y. Kobayashi, A. Yoshida, X. Diao, S. Ogawa, K. Hayakawa, K. Yukihira, F.
Shimura, F. Ambe, In-Beam Mössbauer spectroscopy after GeV-ion implantation at an on-line
projectile-fragments separator. Hyperfine Interact 141–142, 157–162 (2002)
75. Y. Yoshida, Y. Kobayashi, K. Hayakawa, K. Yukihira, A. Yoshida, H. Ueno, F. Shimura,
F. Ambe, In-situ observation of substitutional and interstitial Fe atoms in Si after GeVimplantation: an in-beam Mössbauer study. Phys. B 376–377, 69–72 (2006)
76. Y. Yoshida, Y. Kobayashi, K. Yukihira, K. Hayakawa, K. Suzuki, A. Yoshida, H. Ueno, A.
Yoshimi, K. Shimada, D. Nagae, K. Asahi, G. Langouche, 57 Fe diffusion in n-type Si after
GeV-implantation of 57 Mn. Phys. B 401–402, 101–104 (2007)
77. Y. Yoshida, K. Suzuki, Y. Kobayashi, T. Nagatomo, Y. Akiyama, K. Yukihira, K. Hayakawa,
H. Ueno, A. Yoshimi, D. Nagae, K. Asahi, G. Langouche, 57 Fe charge state in mc-Si solar cells
under light illumination After GeV- implantation of 57 Mn. Hyperfine Interact 204, 133–137
(2012)
78. K. Suzuki, Y. Yoshida, K. Hayakawa, K. Yukihira, M. Ichino, K. Asahi, Observation of iron
impurities diffusion in silicon under bending stress by Mössbauer spectroscopy. Hyperfine
Interact 197, 213–217 (2010)
79. M. Ichino, Y. Yoshida, In-situ observation of iron impurities in n-type silicon under UV light
illumination by Mössbauer spectroscopy. in Proceeding of The Forum on the Science and
Technology of Silicon Materials, vol. 357 (2010)
80. K. Tanaka, Y. Akiyama, K. Hayakawa, K. Yukihira, Y. Yoshida, Mapping analyses of Fediffused mc-Si using Mössbauer microscope and photoluminescence. Hyperfine Interact 206,
75–78 (2012)
81. K. Tanaka, T. Watanabe, T. Uenoyama, Y. Ino, Y. Yoshida, Search for Fe-B pairs in highly Bdoped Si wafers by Mössbauer spectroscopy. in Proceedings of Si-Forum 2014, Hamamatsu,
(2014), pp. 107–111
82. Y. Yoshida, Y. Tsukamoto, M. Ichino, K. Tanaka, Direct observation of carrier trapping
processes on Fe impurities in mc-si solar cell. Solid State Phenom. 205–206, 40–46 (2014)
83. Y. Yoshida, K. Suzuki, K. Hayakawa, K. Yukihira, H. Soejima, Mössbauer spectroscopic
microscope. Hyperfine Interact. 188, 121–126 (2009)
84. Y. Yoshida, K. Hayakawa, K. Yukihira, M. Ichino, Y. Akiyama, H. Kumabe, H. Soejima,
Development and applications of “Mössbauer cameras.” Hyperfine Interact. 198, 23–29
(2010)
Y. Yoshida
63. Y. Yoshida, Y. Kobayashi, K. Hayakawa, K. Yukihira, J. Nakamura, S. Nasu, E. Yagi, F. Ambe,
In-beam Mössbauer study on 57 Fe jumps in solid Ar and Solid Xe after coulomb-excitation
and recoil-implantation. RIKEN Rev. 16, 19–20 (1997)
64. Y. Yoshida, Mössbauer spectroscopy to investigate atomistic jump processes on an atomistic
scale. Hyperfine Interact 113, 183–198 (1998)
65. R. Sielemann, Y. Kobayashi, Y. Yoshida, H.P. Gunnlaugsson, G. Weyer, Magnetism at single
isolated iron atoms implanted in graphite. Phys. Rev. Lett. 101, 137206 (2008)
66. G. Vogl, W. Mansel, P.H. Dederichs, Plys. Rev. Lett. 36, 1497 (1976)
67. W. Petry, G. Vogl, W. Mansel, Phys. Rev. Lett. 45, 1862 (1980)
68. H.J. Blythe, H. Kronmuller, A. Seeger, F. Walz, Phys. Stat. Sol. (a) 181, 233, (2000)
69. J. Christiansen, E. Recknagel, G. Weyer, Phys. Rev. Lett. 20, 46 (1966)
70. Y. Yoshida, Y. Kobayashi, F. Ambe, E. Yagi, A. Seeger et al., Direct observation of selfinterstitial motion in pure iron by 56 Fe (d, p) 5 7Fe In-beam mössbauer spectroscopy. Defect
Diffus Forum 194–199, 29–34 (2001)
71. A.A. Istratov, H. Hieslmair, E.R Weber, Iron and its complexes in silicon. Appl. Phys. A
69 (1999) 13–44; A.A. Istratov, H. Hieslmair, E.R Weber, Iron contamination in silicon
technology Appl. Phys. A 70, 489–534 (2000)
72. Y. Yoshida, Direct Observation of Substitutional and Interstitial Fe atoms in Si by hightemperature and In-beam Mössbauer Spectroscopy, ALTECH 2003, ECS, (Salt Lake City,
US, 479–482, 2003)
73. Y. Yoshida, Y. Kobayashi, K. Hayakawa, K. Yukihira, F. Shimura, A. Yoshida, X. Diao,
H. Ogawa, Y. Yano, F. Ambe, In-beam Mössbauer study on interstitial and substitutional
57 Mn/ 57 Fe jumps in Si. Defect Diffus Forum 194–199, 611–616 (2001)
74. Y. Yoshida, Y. Kobayashi, A. Yoshida, X. Diao, S. Ogawa, K. Hayakawa, K. Yukihira, F.
Shimura, F. Ambe, In-Beam Mössbauer spectroscopy after GeV-ion implantation at an on-line
projectile-fragments separator. Hyperfine Interact 141–142, 157–162 (2002)
75. Y. Yoshida, Y. Kobayashi, K. Hayakawa, K. Yukihira, A. Yoshida, H. Ueno, F. Shimura,
F. Ambe, In-situ observation of substitutional and interstitial Fe atoms in Si after GeVimplantation: an in-beam Mössbauer study. Phys. B 376–377, 69–72 (2006)
76. Y. Yoshida, Y. Kobayashi, K. Yukihira, K. Hayakawa, K. Suzuki, A. Yoshida, H. Ueno, A.
Yoshimi, K. Shimada, D. Nagae, K. Asahi, G. Langouche, 57 Fe diffusion in n-type Si after
GeV-implantation of 57 Mn. Phys. B 401–402, 101–104 (2007)
77. Y. Yoshida, K. Suzuki, Y. Kobayashi, T. Nagatomo, Y. Akiyama, K. Yukihira, K. Hayakawa,
H. Ueno, A. Yoshimi, D. Nagae, K. Asahi, G. Langouche, 57 Fe charge state in mc-Si solar cells
under light illumination After GeV- implantation of 57 Mn. Hyperfine Interact 204, 133–137
(2012)
78. K. Suzuki, Y. Yoshida, K. Hayakawa, K. Yukihira, M. Ichino, K. Asahi, Observation of iron
impurities diffusion in silicon under bending stress by Mössbauer spectroscopy. Hyperfine
Interact 197, 213–217 (2010)
79. M. Ichino, Y. Yoshida, In-situ observation of iron impurities in n-type silicon under UV light
illumination by Mössbauer spectroscopy. in Proceeding of The Forum on the Science and
Technology of Silicon Materials, vol. 357 (2010)
80. K. Tanaka, Y. Akiyama, K. Hayakawa, K. Yukihira, Y. Yoshida, Mapping analyses of Fediffused mc-Si using Mössbauer microscope and photoluminescence. Hyperfine Interact 206,
75–78 (2012)
81. K. Tanaka, T. Watanabe, T. Uenoyama, Y. Ino, Y. Yoshida, Search for Fe-B pairs in highly Bdoped Si wafers by Mössbauer spectroscopy. in Proceedings of Si-Forum 2014, Hamamatsu,
(2014), pp. 107–111
82. Y. Yoshida, Y. Tsukamoto, M. Ichino, K. Tanaka, Direct observation of carrier trapping
processes on Fe impurities in mc-si solar cell. Solid State Phenom. 205–206, 40–46 (2014)
83. Y. Yoshida, K. Suzuki, K. Hayakawa, K. Yukihira, H. Soejima, Mössbauer spectroscopic
microscope. Hyperfine Interact. 188, 121–126 (2009)
84. Y. Yoshida, K. Hayakawa, K. Yukihira, M. Ichino, Y. Akiyama, H. Kumabe, H. Soejima,
Development and applications of “Mössbauer cameras.” Hyperfine Interact. 198, 23–29
(2010)