6.7 Methods of Counteracting Microcircuit Re-engineering Processes
615
Fig. 6.87 Modified CMOS structure variant: the silicide layer only propagates to heavily legated
drain and source regions and does not propagate to LDD 7a, 7b, 9a, 9b. N-transistors and p-transistors
are stuck-closed
Fig. 6.88 Modified CMOS structure variant: the silicide layer extends both to heavily doped regions
of the drain and source, and to weakly doped LDD regions. N-transistors and p-transistors are
stuck-open
Précédent

- 634/839

Suivant