9 Laser-Induced Forward Transfer Towards Additive Manufacturing
281
Table 9.1
(continued)
Transferred material
Substrate
Feature size
(µm)
Laser source
Wavelength Pulse
duration
Application
Author, year
References
Liquid-phase exfoliated
graphene
Si/SiO
2 and
flexible polymer
substrates
180–200
Nd:YAG
266 nm
10 ns
Organic
electronics
Papazoglou
(2014)
[122]
Organic semiconductor
(P3HT)
SiO
2 /Si
60–130
Nd:YAG
266 nm
4 ns
OTFT
Zergioti (2011)
[56]
Organic semiconductor
P3HT
Si/SiO
2
250
Nd:YAG
266 nm
4 ns
OTFT
Makrygianni
(2013)
[58]
PIB, PECH, and PEI
chemoselective
polymers
SMR devices
350
XeCl
308 nm
Sensors
Cannatà (2012)
[79]
Chemoselective
polymers: PECH, PIB,
and PEI
SAW resonators
XeCl
308 nm
Sensors
Pietrantonio
(2012)
[80]
PEDOT:PSS
BK7 or Si, or
flexible
150
Nd:YAG, S
pulse amplitude
systems, LPX
210i Lambda
Physics
1064, 532,
1025,
248 nm
8 ns,
50 ps,
400 fs,
25 ns
Plastic
electronics
Thomas (2007)
[31]
Inorganic materials-oxides
SnCl
2 (acac)
2 , SnO
2 NP Metal electrodes
sputtered onto
glass
500 or 1000 XeCl excimer
308 nm
30 ns
Gas sensors
Mattle (2013)
[84]
LiCoO
2 cathode and
carbon anode
Al and Cu current
collectors
50
Nd:YVO
4
355 nm
Microbatteries
Kim (2007)
[68]
(continued)