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45. H. Lahreche, P. Vennegues, M. Vaillc et al., Comparative study of GaN layers grown on
insulating AlN and conductive AlGaN buffer layers. Semicond. Sci. Technol. 14, L33 (1999)
46. S. Einfeldt, A. Roskowski, E. Preble et al., Strain and crystallographic tilt in uncoalesced GaN
layers grown by maskless pendeoepitaxy. Appl. Phys. Lett. 80, 953 (2002)
47. V. Davydov, N. Averkiev, I. Gonecheruk et al., Raman and photoluminescence studies of biaxial
strain in GaN epitaxial layers grown on 6H-SiC. J. Appl. Phys. 82, 5097 (1997)
48. B. Skromme, H. Zhao, D. Wang et al., Strain determination in heteroepitaxial GaN. Appl. Phys.
Lett. 71, 829 (1997)
49. W. Perry, T. Zheleva, M. Bremser et al., Correlation of biaxial strains, bound exciton energies,
and defect microstructures in GaN films grown on AlN/6H-SiC (0001) substrates. J. Electron.
Mater. 26, 224 (1997)
50. P. Waltereit, O. Brandt, A. Trampert et al., Influence of AlN nucleation layers on growth mode
and strain relief of GaN grown on 6H-SiC (0001). Appl. Phys. Lett. 74, 3660 (1999)
51. T. Weeks, M. Bremser, K. Ailey et al., Undoped and doped GaN thin films deposited on hightemperature monocrystalline AIN buffer layers on vicinal and on-axis alpha (6H)-SiC (0001)
substrates via organometallic vapor phase epitaxy. J. Mater. Res. 11, 1101 (1996)
52. R. Davis, T. Weeks, M. Bremser et al., Growth of AlN and GaN thin films via OMVPE and
gas source MBE and their characterization. Solid-State Electr. 41, 129 (1997)
53. K. Yasuyuki, A. Tetsuya, K. Naoki, Thermal stability of low-temperature GaN and AlN buffer
layers during metalorganic vapor phase epitaxy monitored by in situ shallow-angle reflectance
using ultraviolet light. Jpn. J. Appl. Phys. 37, L1208 (1998)
54. Y. Wu, A. Hanlon, J. Kaeding et al., Effect of nitridation on polarity, microstructure, and
morphology of AlN films. Appl. Phys. Lett. 84, 912 (2004)
55. S. Tnaka, R. Kern, R. Davis, Initial stage of AlN film growth on 6H-SiC by plasma assisted,
gas source MBE. Appl. Phys. Lett. 66, 37 (1995)
56. F. Ponce, B. Krusor, J. Major et al., Microstructure of GaN epitaxy on SiC using AlN buffer
layer. Appl. Phys. Lett. 67, 410 (1995)
57. Z. Chen, S. Newman, D. Brown et al., High quality AlN grown on SiC by metal organic
chemical vapor deposition. Appl. Phys. Lett. 93, 191906 (2008)
58. B. Moran, F. Wu, A. Romanov et al., Structural and morphological evolution of GaN grown by
metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer. J. Cryst.
Growth 273, 38 (2004)
59. B. Heying, X. Wu, S. Keller et al., Role of threading dislocation structure on the X-ray diffraction
peak widths in epitaxial GaN films. Appl. Phys. Lett. 68, 643 (1996)
60. S. Einfeldt, Z. Reitmeier, R. Davis, Surface morphology and strain of GaN layers grown using
6H-SiC (0001) substrates with different buffer layers. J. Cryst. Growth 253, 129 (2003)
61. S. Heikman, S. Keller, S. DenBaars et al., Growth of Fe doped semi-insulating GaN by
metalorganic chemical vapor deposition. Appl. Phys. Lett. 81, 439 (2002)
62. T. Nishida, N. Kobayashi, Nucleation control in MOVPE of group III-nitrides on SiC substrates.
J. Cryst. Growth 221, 297 (2000)
73
45. H. Lahreche, P. Vennegues, M. Vaillc et al., Comparative study of GaN layers grown on
insulating AlN and conductive AlGaN buffer layers. Semicond. Sci. Technol. 14, L33 (1999)
46. S. Einfeldt, A. Roskowski, E. Preble et al., Strain and crystallographic tilt in uncoalesced GaN
layers grown by maskless pendeoepitaxy. Appl. Phys. Lett. 80, 953 (2002)
47. V. Davydov, N. Averkiev, I. Gonecheruk et al., Raman and photoluminescence studies of biaxial
strain in GaN epitaxial layers grown on 6H-SiC. J. Appl. Phys. 82, 5097 (1997)
48. B. Skromme, H. Zhao, D. Wang et al., Strain determination in heteroepitaxial GaN. Appl. Phys.
Lett. 71, 829 (1997)
49. W. Perry, T. Zheleva, M. Bremser et al., Correlation of biaxial strains, bound exciton energies,
and defect microstructures in GaN films grown on AlN/6H-SiC (0001) substrates. J. Electron.
Mater. 26, 224 (1997)
50. P. Waltereit, O. Brandt, A. Trampert et al., Influence of AlN nucleation layers on growth mode
and strain relief of GaN grown on 6H-SiC (0001). Appl. Phys. Lett. 74, 3660 (1999)
51. T. Weeks, M. Bremser, K. Ailey et al., Undoped and doped GaN thin films deposited on hightemperature monocrystalline AIN buffer layers on vicinal and on-axis alpha (6H)-SiC (0001)
substrates via organometallic vapor phase epitaxy. J. Mater. Res. 11, 1101 (1996)
52. R. Davis, T. Weeks, M. Bremser et al., Growth of AlN and GaN thin films via OMVPE and
gas source MBE and their characterization. Solid-State Electr. 41, 129 (1997)
53. K. Yasuyuki, A. Tetsuya, K. Naoki, Thermal stability of low-temperature GaN and AlN buffer
layers during metalorganic vapor phase epitaxy monitored by in situ shallow-angle reflectance
using ultraviolet light. Jpn. J. Appl. Phys. 37, L1208 (1998)
54. Y. Wu, A. Hanlon, J. Kaeding et al., Effect of nitridation on polarity, microstructure, and
morphology of AlN films. Appl. Phys. Lett. 84, 912 (2004)
55. S. Tnaka, R. Kern, R. Davis, Initial stage of AlN film growth on 6H-SiC by plasma assisted,
gas source MBE. Appl. Phys. Lett. 66, 37 (1995)
56. F. Ponce, B. Krusor, J. Major et al., Microstructure of GaN epitaxy on SiC using AlN buffer
layer. Appl. Phys. Lett. 67, 410 (1995)
57. Z. Chen, S. Newman, D. Brown et al., High quality AlN grown on SiC by metal organic
chemical vapor deposition. Appl. Phys. Lett. 93, 191906 (2008)
58. B. Moran, F. Wu, A. Romanov et al., Structural and morphological evolution of GaN grown by
metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer. J. Cryst.
Growth 273, 38 (2004)
59. B. Heying, X. Wu, S. Keller et al., Role of threading dislocation structure on the X-ray diffraction
peak widths in epitaxial GaN films. Appl. Phys. Lett. 68, 643 (1996)
60. S. Einfeldt, Z. Reitmeier, R. Davis, Surface morphology and strain of GaN layers grown using
6H-SiC (0001) substrates with different buffer layers. J. Cryst. Growth 253, 129 (2003)
61. S. Heikman, S. Keller, S. DenBaars et al., Growth of Fe doped semi-insulating GaN by
metalorganic chemical vapor deposition. Appl. Phys. Lett. 81, 439 (2002)
62. T. Nishida, N. Kobayashi, Nucleation control in MOVPE of group III-nitrides on SiC substrates.
J. Cryst. Growth 221, 297 (2000)