72
4 Epitaxial of III-Nitride LED Materials
20. A. Sakai, H. Sunakawa, A. Usui, Transmission electron microscopy of defects in GaN films
formed by epitaxial lateral overgrowth. Appl. Phys. Lett. 73, 481 (1998)
21. S. Figge, T. Bottcher, S. Einfeldt et al., In-situ and ex-situ evaluation of the film coalescence
for GaN growth on GaN nucleation layers. J. Cryst. Growth 221, 262 (2000)
22. S. Einfeldt, T. Bottcher, S. Figge et al., Thermally induced stress in GaN layers with regard to
film coalescence. J. Cryst. Growth 230, 357 (2001)
23. H. Heinke, V. Kirchner, S. Einfeldt et al., X-ray diffraction analysis of the defect structure in
epitaxial GaN. Appl. Phys. Lett. 77, 2145 (2000)
24. B. Beaumont, M. Vaille, T. Boufaden et al., High quality GaN grown by MOVPE. J. Cryst.
Growth 170, 316 (1997)
25. J.E. Ayers, The measurement of threading dislocation densities in semiconductor crystals by
X-ray diffraction. J. Cryst. Growth 135, 71 (1994)
26. S. Nakamura, T. Mukai, M. Senoh, In situ monitoring and Hall measurements of GaN grown
with GaN buffer layers. J. Appl. Phys. 71, 5543 (1991)
27. J. Wu, X. Han, J. Li, et al., Influence of buffer layer thickness on the properties of an undoped
GaN layer grown on sapphire substrate by metalorganic chemical vapor deposition. J. Syn.
Cryst. 34, 466 (2005) (in Chinese)
28. T. Wang, T. Shirahama, H. Sun et al., Influence of buffer layer and growth temperature on the
properties of an undoped GaN layer grown on sapphire substrate by metalorganic chemical
vapor deposition. Appl. Phys. Lett. 76, 2220 (2000)
29. J. Kuznia, M. Khan, D. Olson et al., Influence of buffer layers on the deposition of high quality
single crystal GaN over sapphire substrates. J. Appl. Phys. 73, 4700 (1993)
30. G. Li, S.J. Chua, S.J. Xu et al., Nature and elimination of yellow-band luminescence and
donor–acceptor emission of undoped GaN. Appl. Phys. Lett. 74, 2821 (1999)
31. M. Yi, H. Lee, D. Kim et al., Effects of growth temperature on GaN nucleation layers. Appl.
Phys. Lett. 75, 2187 (1999)
32. H. Cho, K. Kim, C. Hong et al., Electron traps and growth rate of buffer layers in unintentionally
doped GaN. J. Cryst. Growth 223, 38 (2001)
33. C. Lee, S. Son, I. Lee et al., Growth and characterization of GaN epilayers grown at various flow
rates of trimetylgallium during growth of nucleation layers. J. Cryst. Growth 171, 27 (1996)
34. K. Kim, C. Oh, K. Lee et al., Effects of growth rate of a GaN buffer layer on the properties of
GaN on a sapphire substrate. J. Appl. Phys. 85, 8441 (1999)
35. F. Juang, Y. Su, S. Chang, et al., Effects of buffer layer growth conditions on GaN epilayer
quality by MOCVD, in Proceedings of 4th Conference on Light Emitting Diodes, 26–27 January
2000, San Jose, CA
36. J. Chen, S. Zhang, B. Zhang et al., Influences of reactor pressure of GaN buffer layers on
morphological evolution of GaN grown by MOCVD. J. Cryst. Growth 256, 248 (2003)
37. B. Cao, K. Xu, Y. Ishitani et al., In-situ spectroscopic ellipsometry investigation and control
of GaN growth mode in metal-organic vapor phase epitaxy at low pressures of 20 Torr. Thin
Solid Films 455, 661 (2004)
38. S. Kim, J. Oha, J. Kang et al., Two-step growth of high quality GaN using V/III ratio variation
in the initial growth stage. J. Cryst. Growth 262, 7 (2004)
39. T. Yang, K. Uchida, T. Mishima et al., Control of initial nucleation by reducing the V/III ratio
during the early stages of GaN growth. Physica Status Solidi A-Appl. Mater. Sci. 180, 45 (2000)
40. L.S. Ramsdell, Studies on Silicon Carbide. Am. Miner. 32, 64 (1947)
41. G.R. Fisber, P. Barns, Phi. Mag. B. 61, 217 (1990)
42. Wikimedia Foundation, Inc., Silicon carbide [EB/OL]. http://en.wikipedia.org/wiki/Silicn_car
bide
43. T. Weeks, M. Bremser, K. Ailey et al., GaN thin films deposited via organometallic vapor phase
epitaxy on alpha(6H)-SiC(0001) using high temperature monocrystalline AlN buffer Layers.
Appl. Phys. Lett. 67, 401 (1995)
44. B. Moran, F. Wu, A. Romanvo et al., Structure and morphological evolution of GaN grown by
metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer. J. Cryst.
Growth 73, 38 (2004)
4 Epitaxial of III-Nitride LED Materials
20. A. Sakai, H. Sunakawa, A. Usui, Transmission electron microscopy of defects in GaN films
formed by epitaxial lateral overgrowth. Appl. Phys. Lett. 73, 481 (1998)
21. S. Figge, T. Bottcher, S. Einfeldt et al., In-situ and ex-situ evaluation of the film coalescence
for GaN growth on GaN nucleation layers. J. Cryst. Growth 221, 262 (2000)
22. S. Einfeldt, T. Bottcher, S. Figge et al., Thermally induced stress in GaN layers with regard to
film coalescence. J. Cryst. Growth 230, 357 (2001)
23. H. Heinke, V. Kirchner, S. Einfeldt et al., X-ray diffraction analysis of the defect structure in
epitaxial GaN. Appl. Phys. Lett. 77, 2145 (2000)
24. B. Beaumont, M. Vaille, T. Boufaden et al., High quality GaN grown by MOVPE. J. Cryst.
Growth 170, 316 (1997)
25. J.E. Ayers, The measurement of threading dislocation densities in semiconductor crystals by
X-ray diffraction. J. Cryst. Growth 135, 71 (1994)
26. S. Nakamura, T. Mukai, M. Senoh, In situ monitoring and Hall measurements of GaN grown
with GaN buffer layers. J. Appl. Phys. 71, 5543 (1991)
27. J. Wu, X. Han, J. Li, et al., Influence of buffer layer thickness on the properties of an undoped
GaN layer grown on sapphire substrate by metalorganic chemical vapor deposition. J. Syn.
Cryst. 34, 466 (2005) (in Chinese)
28. T. Wang, T. Shirahama, H. Sun et al., Influence of buffer layer and growth temperature on the
properties of an undoped GaN layer grown on sapphire substrate by metalorganic chemical
vapor deposition. Appl. Phys. Lett. 76, 2220 (2000)
29. J. Kuznia, M. Khan, D. Olson et al., Influence of buffer layers on the deposition of high quality
single crystal GaN over sapphire substrates. J. Appl. Phys. 73, 4700 (1993)
30. G. Li, S.J. Chua, S.J. Xu et al., Nature and elimination of yellow-band luminescence and
donor–acceptor emission of undoped GaN. Appl. Phys. Lett. 74, 2821 (1999)
31. M. Yi, H. Lee, D. Kim et al., Effects of growth temperature on GaN nucleation layers. Appl.
Phys. Lett. 75, 2187 (1999)
32. H. Cho, K. Kim, C. Hong et al., Electron traps and growth rate of buffer layers in unintentionally
doped GaN. J. Cryst. Growth 223, 38 (2001)
33. C. Lee, S. Son, I. Lee et al., Growth and characterization of GaN epilayers grown at various flow
rates of trimetylgallium during growth of nucleation layers. J. Cryst. Growth 171, 27 (1996)
34. K. Kim, C. Oh, K. Lee et al., Effects of growth rate of a GaN buffer layer on the properties of
GaN on a sapphire substrate. J. Appl. Phys. 85, 8441 (1999)
35. F. Juang, Y. Su, S. Chang, et al., Effects of buffer layer growth conditions on GaN epilayer
quality by MOCVD, in Proceedings of 4th Conference on Light Emitting Diodes, 26–27 January
2000, San Jose, CA
36. J. Chen, S. Zhang, B. Zhang et al., Influences of reactor pressure of GaN buffer layers on
morphological evolution of GaN grown by MOCVD. J. Cryst. Growth 256, 248 (2003)
37. B. Cao, K. Xu, Y. Ishitani et al., In-situ spectroscopic ellipsometry investigation and control
of GaN growth mode in metal-organic vapor phase epitaxy at low pressures of 20 Torr. Thin
Solid Films 455, 661 (2004)
38. S. Kim, J. Oha, J. Kang et al., Two-step growth of high quality GaN using V/III ratio variation
in the initial growth stage. J. Cryst. Growth 262, 7 (2004)
39. T. Yang, K. Uchida, T. Mishima et al., Control of initial nucleation by reducing the V/III ratio
during the early stages of GaN growth. Physica Status Solidi A-Appl. Mater. Sci. 180, 45 (2000)
40. L.S. Ramsdell, Studies on Silicon Carbide. Am. Miner. 32, 64 (1947)
41. G.R. Fisber, P. Barns, Phi. Mag. B. 61, 217 (1990)
42. Wikimedia Foundation, Inc., Silicon carbide [EB/OL]. http://en.wikipedia.org/wiki/Silicn_car
bide
43. T. Weeks, M. Bremser, K. Ailey et al., GaN thin films deposited via organometallic vapor phase
epitaxy on alpha(6H)-SiC(0001) using high temperature monocrystalline AlN buffer Layers.
Appl. Phys. Lett. 67, 401 (1995)
44. B. Moran, F. Wu, A. Romanvo et al., Structure and morphological evolution of GaN grown by
metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer. J. Cryst.
Growth 73, 38 (2004)