32
3 Properties and Testing of Group III-Nitride LED Materials
References
1. J. Pankove, T. Moustakas, Gallium Nitride (GaN) I. Academic Press (1998)
2. M. Leszcynski, I. Grzegory, M. Bockowski, X-ray examination of GaN single crystals grown
at high hydrostatic pressure. J. Cryst. Growth 126(4), 601–604 (1993)
3. M. Levinshtein, S. Rumyantsev, M. Shur, Properties of Advanced Semiconductor Materials
GaN, AlN, InN, BN, SiC, SiGe (Wiley, New York, 2001), pp. 1–30
4. V. Siklitsky, Electronic archive: new semiconductor materials. Characteristics and properties
[EB/OL] (2012). http://www.ioffe.rssi.ru/SVA/NSM/Semicond/index.html
5. E. Monroy, N. Gogneau, F. Enjalbert et al., Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds. J. Appl. Phys. 94(5), 3121–3127 (2003)
6. S. Dmitry, B. Rajaram, Z. Chung, Gallium indium nitride-based green lasers. J. Lightwave
Technol. 30(5), 679–699 (2012)
7. O. Ambacher, J. Majewski, C. Miskys et al., Pyroelectric properties of Al(In)GaN/ GaN heteroand quantum well structures. J. Phys. Condens. Matter. 14(13), 3399–3434 (2002)
8. T. Takeuchi, C. Wetzel, S. Yamaguchi et al., Determination of piezoelectric fields in strained
GaInN quantum wells using the quantum-confined stark effect. Appl. Phys. Lett. 73, 1691
(1998)
9. S.F. Chichibu, A.C. Abare, M.S. Minsky et al., Effective band gap inhomogeneity and
piezoelectric field in InGaN/GaN multiquantum well structures. Appl. Phys. Lett. 73, 2006
(1998)
10. S. Yamamoto, Y.J. Zhao, C.C. Pan et al., High-efficiency single-quantum-well green and
yellow-green light-emitting diodes on semipolar (2021) GaN substrates. Appl. Phys. Express
3, 122102 (2010)
11. I. Koslow, J. Sonoda, R. Chung, et al., High power and high efficiency blue InGaN Light
emitting diodes on free-standing semipolar (3031) bulk GaN substrate. Jpn. J. Appl. Phys. 49,
8R, 080203 (2010)
12. S. Nakamura, GaN growth using GaN buffer layer. Jpn. J. Appl. Phys. 30(10A), L1705–L1707
(1991)
13. J. Neugebauer, C.G. Van de Walle, Atomic geometry and electronic-structure of native defects
in GaN. Phys. Rev. B 50, 8067 (1994)
14. S. Nakamura, M. Senoh, T. Mukai, Highly p-typed My-doped GaN films growth with GaN
buffer layers. Jpn. J. Appl. Phys. 30, 1708–1711 (1991)
15. J. Lu, C. Chen, Modern Analytical Technique (Tsinghua University Press, 1995) ISBN:
9787302018308 (in Chinese)
16. D.R. Yang, Semiconductor Material Testing and Analysis (China Science Publishing, 2009)
ISBN: 9787030270368 (in Chinese)
3 Properties and Testing of Group III-Nitride LED Materials
References
1. J. Pankove, T. Moustakas, Gallium Nitride (GaN) I. Academic Press (1998)
2. M. Leszcynski, I. Grzegory, M. Bockowski, X-ray examination of GaN single crystals grown
at high hydrostatic pressure. J. Cryst. Growth 126(4), 601–604 (1993)
3. M. Levinshtein, S. Rumyantsev, M. Shur, Properties of Advanced Semiconductor Materials
GaN, AlN, InN, BN, SiC, SiGe (Wiley, New York, 2001), pp. 1–30
4. V. Siklitsky, Electronic archive: new semiconductor materials. Characteristics and properties
[EB/OL] (2012). http://www.ioffe.rssi.ru/SVA/NSM/Semicond/index.html
5. E. Monroy, N. Gogneau, F. Enjalbert et al., Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds. J. Appl. Phys. 94(5), 3121–3127 (2003)
6. S. Dmitry, B. Rajaram, Z. Chung, Gallium indium nitride-based green lasers. J. Lightwave
Technol. 30(5), 679–699 (2012)
7. O. Ambacher, J. Majewski, C. Miskys et al., Pyroelectric properties of Al(In)GaN/ GaN heteroand quantum well structures. J. Phys. Condens. Matter. 14(13), 3399–3434 (2002)
8. T. Takeuchi, C. Wetzel, S. Yamaguchi et al., Determination of piezoelectric fields in strained
GaInN quantum wells using the quantum-confined stark effect. Appl. Phys. Lett. 73, 1691
(1998)
9. S.F. Chichibu, A.C. Abare, M.S. Minsky et al., Effective band gap inhomogeneity and
piezoelectric field in InGaN/GaN multiquantum well structures. Appl. Phys. Lett. 73, 2006
(1998)
10. S. Yamamoto, Y.J. Zhao, C.C. Pan et al., High-efficiency single-quantum-well green and
yellow-green light-emitting diodes on semipolar (2021) GaN substrates. Appl. Phys. Express
3, 122102 (2010)
11. I. Koslow, J. Sonoda, R. Chung, et al., High power and high efficiency blue InGaN Light
emitting diodes on free-standing semipolar (3031) bulk GaN substrate. Jpn. J. Appl. Phys. 49,
8R, 080203 (2010)
12. S. Nakamura, GaN growth using GaN buffer layer. Jpn. J. Appl. Phys. 30(10A), L1705–L1707
(1991)
13. J. Neugebauer, C.G. Van de Walle, Atomic geometry and electronic-structure of native defects
in GaN. Phys. Rev. B 50, 8067 (1994)
14. S. Nakamura, M. Senoh, T. Mukai, Highly p-typed My-doped GaN films growth with GaN
buffer layers. Jpn. J. Appl. Phys. 30, 1708–1711 (1991)
15. J. Lu, C. Chen, Modern Analytical Technique (Tsinghua University Press, 1995) ISBN:
9787302018308 (in Chinese)
16. D.R. Yang, Semiconductor Material Testing and Analysis (China Science Publishing, 2009)
ISBN: 9787030270368 (in Chinese)