80
R. Dutta and N. Paitya
E =
E 2
x + E 2
y
(3)
Now, the drain or tunneling current can be obtained by using Kane’s model
[11, 12].
I tun = q
¨
G BTBT dxdy
(4)
where the carrier generation rate is
G BTBT = A K
|E|
D
E g
exp
−
B K E
3/2
g
|E|
(5)
Here, A K and B K are the effective mass-dependent device parameters [13]. D is
the constant for DBG and IDBG materials [14], whereas E g is energy gap of InN
channel and E is the local electric field [4].
The proposed SG-PI-TFET is designed with device simulator. Since reduction
of defect-assisted transport processes faces serious challenges in tunnel FET design,
therefore, the Shockley–Read–Hall (SRH) model is used to assimilate recombination
effects. This simulates leakage current due to thermal generation. Non-local bandto-band tunneling (BTBT) model is used in this work.
3 Results and Discussion
3.1 DC Characteristics
To overcome the limitations of boosting I ON and for making fast switching TFET,
the I ON characteristics plays an important role. In addition to this, low I OFF is also
desirable for low leakage current. In Fig. 2, we can see that oxide thickness variation
affects I ON significantly. Oxide thickness is varied from 2 to 8 nm keeping doping
of 1 × 10
17 cm
−3 in drain region.
From Fig. 2, it is evident that a steep slope is obtained that leads to boost in drain
current I DS for minimum oxide thickness. The metal work function for SG-PI-TFET
is chosen as 4.3 eV.
Figure 3 shows the I DS − V GS characteristics of InN-based SG-PI-TFET in which
the drain current increases with increasing gate-source bias.
Figure 4 shows a surface potential variation for gate bias along the channel. The
TCAD simulated results are validated with analytical model.
Figure 5 represents an electric field behaved laterally along the x-axis with the
channel to study SCE.
R. Dutta and N. Paitya
E =
E 2
x + E 2
y
(3)
Now, the drain or tunneling current can be obtained by using Kane’s model
[11, 12].
I tun = q
¨
G BTBT dxdy
(4)
where the carrier generation rate is
G BTBT = A K
|E|
D
E g
exp
−
B K E
3/2
g
|E|
(5)
Here, A K and B K are the effective mass-dependent device parameters [13]. D is
the constant for DBG and IDBG materials [14], whereas E g is energy gap of InN
channel and E is the local electric field [4].
The proposed SG-PI-TFET is designed with device simulator. Since reduction
of defect-assisted transport processes faces serious challenges in tunnel FET design,
therefore, the Shockley–Read–Hall (SRH) model is used to assimilate recombination
effects. This simulates leakage current due to thermal generation. Non-local bandto-band tunneling (BTBT) model is used in this work.
3 Results and Discussion
3.1 DC Characteristics
To overcome the limitations of boosting I ON and for making fast switching TFET,
the I ON characteristics plays an important role. In addition to this, low I OFF is also
desirable for low leakage current. In Fig. 2, we can see that oxide thickness variation
affects I ON significantly. Oxide thickness is varied from 2 to 8 nm keeping doping
of 1 × 10
17 cm
−3 in drain region.
From Fig. 2, it is evident that a steep slope is obtained that leads to boost in drain
current I DS for minimum oxide thickness. The metal work function for SG-PI-TFET
is chosen as 4.3 eV.
Figure 3 shows the I DS − V GS characteristics of InN-based SG-PI-TFET in which
the drain current increases with increasing gate-source bias.
Figure 4 shows a surface potential variation for gate bias along the channel. The
TCAD simulated results are validated with analytical model.
Figure 5 represents an electric field behaved laterally along the x-axis with the
channel to study SCE.