Group III—Nitrides and Other Semiconductors for Terahertz Detector
191
Fig. 1 Schematic of the devices: a Cross-sectional view of RTD-gated HEMTs. The black coloured
layers represent AlGaN barrier, b grating-gate devices with two different filling factors. Filling
factor, f, is defined as the ratio of the gate length (L g ) to the source-to-drain separation (S S/D ), c top
view of the antenna-coupled device. Reproduced from [7], with the permission of AIP Publishing
Fig. 2 Gain spectra for
configurations exhibiting
maximum gain with varying
ungated conductivity.
Reproduced from [7], with
the permission of AIP
Publishing
191
Fig. 1 Schematic of the devices: a Cross-sectional view of RTD-gated HEMTs. The black coloured
layers represent AlGaN barrier, b grating-gate devices with two different filling factors. Filling
factor, f, is defined as the ratio of the gate length (L g ) to the source-to-drain separation (S S/D ), c top
view of the antenna-coupled device. Reproduced from [7], with the permission of AIP Publishing
Fig. 2 Gain spectra for
configurations exhibiting
maximum gain with varying
ungated conductivity.
Reproduced from [7], with
the permission of AIP
Publishing