100
A. H. Seikh et al.
Fig. 13 The normalized C g
in QWFETs made of
In 1−x Ga x As y p 1−y in with
1D electron statistics as the
independent variable has
been premeditated using (a)
Eq. 5 (green), (d) Eq. 6b
(red), and (e) Eq. 7b (blue)
values of the energy band parameters as given in [41] using (a) Eq. 5 (green), (d)
Eq. 6b (red), and (e) Eq. 7b (blue). From Fig. 12, it appears that the normalized C g
enhances in quantized step-like manner with increasing 1D electron statistics. The
normalized C g in QWFETs made of In 1−x Ga x As y p 1−y in with 1D electron statistics
as the independent variable has been premeditated in Fig. 13 by taking the different
values of the energy band parameters as given in [41] using (a) Eq. 5 (green), (d)
Eq. 6b (red), and (e) Eq. 7b (blue). From Fig. 13, it appears that the normalized C g
enhances in quantized step-like manner with increasing 1D electron statistics. The
normalized C g in QWFETs made of Cd 3 As 2 with V g as the independent variable
has been premeditated in Fig. 14 by taking the different values of the energy band
parameters as given in [41] using (a) Eq. 3 (Violet), (b) Eq. 3 with δ = 0 (orange),
(c) Eq. 5 (green), (d) Eq. 6b (red), and (e) Eq. 7b (blue). From Fig. 14, it appears that
the normalized C g decreases with increasing gate voltage in quantized oscillatory
fashion for all cases as consider in this case. The rate of oscillatory decrease changes
from one type of band model to another type.
The normalized C g in QWFETs made of CdGeAs 2 with V g as the independent
variable has been premeditated in Fig. 15 by taking the different values of the energy
band parameters as given in [41] using (a) Eq. 3 (brown), (b) Eq. 3 with δ = 0
(orange), (c) Eq. 5 (green), (d) Eq. 6b (red), and (e) Eq. 7b (blue). From Fig. 15, it
appears that the normalized C g decreases with increasing gate voltage in quantized
oscillatory fashion for all cases as consider in this case. The rate of oscillatory
decrease changes from one type of band model to another type. The normalized C g in
QWFETs made of InAs with V g as the independent variable has been premeditated in
Fig. 16 by taking the different values of the energy band parameters as given in [41]
A. H. Seikh et al.
Fig. 13 The normalized C g
in QWFETs made of
In 1−x Ga x As y p 1−y in with
1D electron statistics as the
independent variable has
been premeditated using (a)
Eq. 5 (green), (d) Eq. 6b
(red), and (e) Eq. 7b (blue)
values of the energy band parameters as given in [41] using (a) Eq. 5 (green), (d)
Eq. 6b (red), and (e) Eq. 7b (blue). From Fig. 12, it appears that the normalized C g
enhances in quantized step-like manner with increasing 1D electron statistics. The
normalized C g in QWFETs made of In 1−x Ga x As y p 1−y in with 1D electron statistics
as the independent variable has been premeditated in Fig. 13 by taking the different
values of the energy band parameters as given in [41] using (a) Eq. 5 (green), (d)
Eq. 6b (red), and (e) Eq. 7b (blue). From Fig. 13, it appears that the normalized C g
enhances in quantized step-like manner with increasing 1D electron statistics. The
normalized C g in QWFETs made of Cd 3 As 2 with V g as the independent variable
has been premeditated in Fig. 14 by taking the different values of the energy band
parameters as given in [41] using (a) Eq. 3 (Violet), (b) Eq. 3 with δ = 0 (orange),
(c) Eq. 5 (green), (d) Eq. 6b (red), and (e) Eq. 7b (blue). From Fig. 14, it appears that
the normalized C g decreases with increasing gate voltage in quantized oscillatory
fashion for all cases as consider in this case. The rate of oscillatory decrease changes
from one type of band model to another type.
The normalized C g in QWFETs made of CdGeAs 2 with V g as the independent
variable has been premeditated in Fig. 15 by taking the different values of the energy
band parameters as given in [41] using (a) Eq. 3 (brown), (b) Eq. 3 with δ = 0
(orange), (c) Eq. 5 (green), (d) Eq. 6b (red), and (e) Eq. 7b (blue). From Fig. 15, it
appears that the normalized C g decreases with increasing gate voltage in quantized
oscillatory fashion for all cases as consider in this case. The rate of oscillatory
decrease changes from one type of band model to another type. The normalized C g in
QWFETs made of InAs with V g as the independent variable has been premeditated in
Fig. 16 by taking the different values of the energy band parameters as given in [41]