bending of thin beams, and extension and bending of thin plates in Chaps. 3, 4, and
5, respectively, with solutions of static and dynamic problems. Chapter 6 is devoted
to composite structures of piezoelectric dielectrics and nonpiezoelectric semiconductors in which the acoustoelectric effect is a consequence of the polarization and
conduction in component phases. Chapters 7 specializes in thermal effects.
The literature on piezoelectric semiconductor materials and devices are abundant,
with quite a few review articles available. This book is limited to theoretical results
based on purely macroscopic approach. In most cases only those papers whose
results are directly used in the book are listed as references. Because of the
nonlinearity associated with the drift current which is the product of the electric
field and carrier concentration, theoretical analysis of piezoelectric semiconductors
presents considerable mathematical challenges. Most of the sections of this book are
based on the linearized theory for small loads or signals. They can provide some
basic understanding but are often insufficient for device design. For nonlinear
analysis, numerical methods are more effective. A few numerical analyses using
COMSOL are also presented in this book. As a book on piezoelectric semiconductors, the focus is on mechanically induced carrier redistribution or motion. However,
some topics treated such as the effects of doping and PN junctions do not rely on
electromechanical coupling and are also relevant in nonpiezoelectric semiconductors.
Lincoln, NE, USA
Jiashi Yang
December, 2019
vi
Preface
5, respectively, with solutions of static and dynamic problems. Chapter 6 is devoted
to composite structures of piezoelectric dielectrics and nonpiezoelectric semiconductors in which the acoustoelectric effect is a consequence of the polarization and
conduction in component phases. Chapters 7 specializes in thermal effects.
The literature on piezoelectric semiconductor materials and devices are abundant,
with quite a few review articles available. This book is limited to theoretical results
based on purely macroscopic approach. In most cases only those papers whose
results are directly used in the book are listed as references. Because of the
nonlinearity associated with the drift current which is the product of the electric
field and carrier concentration, theoretical analysis of piezoelectric semiconductors
presents considerable mathematical challenges. Most of the sections of this book are
based on the linearized theory for small loads or signals. They can provide some
basic understanding but are often insufficient for device design. For nonlinear
analysis, numerical methods are more effective. A few numerical analyses using
COMSOL are also presented in this book. As a book on piezoelectric semiconductors, the focus is on mechanically induced carrier redistribution or motion. However,
some topics treated such as the effects of doping and PN junctions do not rely on
electromechanical coupling and are also relevant in nonpiezoelectric semiconductors.
Lincoln, NE, USA
Jiashi Yang
December, 2019
vi
Preface