160
A. Shah
However, none of these Industries were able to make a profit from their investment.
Indeed, the period after 2009, led to the complete abandon of the micromorph tandem.
In retrospect we can analyse the reasons for this fiasco:
A. The equipment for the large-scale production of modules based on micromorph
tandems was sold at an exaggeratedly high price, leading to commercial prices
for micromorph tandem modules, which were far too high and could not compete
with the prices of other modules, especially c-Si modules.
B. We all, who were then working in this field, failed to notice what was happening
at the same moment in the sector of c-Si modules:
(a) Unprecedented rapid technological progress in the c-Si sector, with a
remarkable improvement, both in the increase of efficiencies and in the
reduction of the material used.
(b) The entry of Chinese manufacturers into the field. These manufacturers,
brought, with massive government support, c-Si modules onto the market
12 ,
with prices well below those of all European and U.S. module producers.
C. We also failed to notice the shift of PV market segments during the same period—
from relatively small PV units to very large installations, where area was the
dominant factor.
In conclusion, amorphous silicon solar cell development taught us a great deal
about thin film solar cells in general and what is necessary to produce a useful, largescale commercial solar module technology. At present, the only use of these types
of solar cells and modules by themselves is in niche markets. The R&D work on
a-Si:H also taught us a great deal about the use of disordered materials in electronic
devices, and it led to their use as passivation layers in crystalline silicon solar cells,
such as HJT.
References
1. A. Shah (ed.), Thin-Film Silicon Solar Cells (EPFL Press, Lausanne, 2010)
2. R.C. Chittick, J.H. Alexander, H.F. Sterling, Preparation and properties of amorphous silicon.
J. Electrochem. Soc. 116, 77–81 (1969)
3. W.E. Spear, P.G. Le Comber, Substitutional doping of amorphous silicon. Solid State Commun.
17, 1193–1196 (1975)
4. W.E. Spear, P.G. Le Comber, Electronic properties of substitutionally doped amorphous Si and
Ge. Phil. Mag. B. 33, 935–949 (1976)
5. D.L. Staebler, C.R. Wronski, Reversible conductivity change in discharge produced amorphous
silicon. Appl. Phys. Lett. 31, 292–294 (1977)
12 This led, in the years to come, to the breakdown of almost all European PV module manufacturers,
both those for thin-film silicon modules and those producing c-Si modules. Thus, the Chinese
Government attained their goal, which was to dominate the PV market—a market considered by
them, to be of strategic importance.
A. Shah
However, none of these Industries were able to make a profit from their investment.
Indeed, the period after 2009, led to the complete abandon of the micromorph tandem.
In retrospect we can analyse the reasons for this fiasco:
A. The equipment for the large-scale production of modules based on micromorph
tandems was sold at an exaggeratedly high price, leading to commercial prices
for micromorph tandem modules, which were far too high and could not compete
with the prices of other modules, especially c-Si modules.
B. We all, who were then working in this field, failed to notice what was happening
at the same moment in the sector of c-Si modules:
(a) Unprecedented rapid technological progress in the c-Si sector, with a
remarkable improvement, both in the increase of efficiencies and in the
reduction of the material used.
(b) The entry of Chinese manufacturers into the field. These manufacturers,
brought, with massive government support, c-Si modules onto the market
12 ,
with prices well below those of all European and U.S. module producers.
C. We also failed to notice the shift of PV market segments during the same period—
from relatively small PV units to very large installations, where area was the
dominant factor.
In conclusion, amorphous silicon solar cell development taught us a great deal
about thin film solar cells in general and what is necessary to produce a useful, largescale commercial solar module technology. At present, the only use of these types
of solar cells and modules by themselves is in niche markets. The R&D work on
a-Si:H also taught us a great deal about the use of disordered materials in electronic
devices, and it led to their use as passivation layers in crystalline silicon solar cells,
such as HJT.
References
1. A. Shah (ed.), Thin-Film Silicon Solar Cells (EPFL Press, Lausanne, 2010)
2. R.C. Chittick, J.H. Alexander, H.F. Sterling, Preparation and properties of amorphous silicon.
J. Electrochem. Soc. 116, 77–81 (1969)
3. W.E. Spear, P.G. Le Comber, Substitutional doping of amorphous silicon. Solid State Commun.
17, 1193–1196 (1975)
4. W.E. Spear, P.G. Le Comber, Electronic properties of substitutionally doped amorphous Si and
Ge. Phil. Mag. B. 33, 935–949 (1976)
5. D.L. Staebler, C.R. Wronski, Reversible conductivity change in discharge produced amorphous
silicon. Appl. Phys. Lett. 31, 292–294 (1977)
12 This led, in the years to come, to the breakdown of almost all European PV module manufacturers,
both those for thin-film silicon modules and those producing c-Si modules. Thus, the Chinese
Government attained their goal, which was to dominate the PV market—a market considered by
them, to be of strategic importance.