0
–20
RF Power MZ P RFin [dBm]
f, GHz
|M Z |, dB
RF Power PD
P
RFout [dBm]
–40
A
B
C
40
20
0
–10
–20
–30
0
0
–60
1
3
2
–20
–40
–60
0
20
(a)
(b)
Fig. 6.11 (a) Dependence of the microwave power P RFPD (P RFMZ ) of “detected” optical emission
in the PD load versus the microwave power P RFMZ in the electrical input of the MZ modulator on
the frequency f ¼ 10 GHz. The optical wavelength is λ ¼ 1550 nm. The DC bias voltage in MZ is
1 V, U 0MZπ ¼ 2 V. Different lines in plots corresponds to different optical losses on matching on
302
6 Operation Analysis of Optoelectronic oscillator (OEO) with External. . .
–20
RF Power MZ P RFin [dBm]
f, GHz
|M Z |, dB
RF Power PD
P
RFout [dBm]
–40
A
B
C
40
20
0
–10
–20
–30
0
0
–60
1
3
2
–20
–40
–60
0
20
(a)
(b)
Fig. 6.11 (a) Dependence of the microwave power P RFPD (P RFMZ ) of “detected” optical emission
in the PD load versus the microwave power P RFMZ in the electrical input of the MZ modulator on
the frequency f ¼ 10 GHz. The optical wavelength is λ ¼ 1550 nm. The DC bias voltage in MZ is
1 V, U 0MZπ ¼ 2 V. Different lines in plots corresponds to different optical losses on matching on
302
6 Operation Analysis of Optoelectronic oscillator (OEO) with External. . .