References
439
15. S. Tongay, J. Zhou, C. Ataca, K. Lo, T.S. Matthews, J. Li, J.C. Grossman, J. Wu, Thermally
driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe 2 versus
MoS 2 . Nano Lett. 12(11), 5576–5580 (2012)
16. W. Zhao, R. Ribeiro, M. Toh, A. Carvalho, C. Kloc, A. Castro Neto, G. Eda, Origin of indirect
optical transitions in few-layer MoS 2 , WS 2 , and WSe 2 . Nano Lett. 13(11), 5627–5634 (2013)
17. V. Kaushik, D. Varandani, B.R. Mehta, Nanoscale mapping of layer-dependent surface potential and junction properties of CVD-Grown MoS 2 domains. J. Phys. Chem. C 119(34),
20136–20142 (2015)
18. A. Kuc, N. Zibouche, T. Heine, Influence of quantum confinement on the electronic structure
of the transition metal sulfide TS 2 . Phys. Rev. B 83(24), 245213 (2011)
19. A. Ramasubramaniam, Large excitonic effects in monolayers of molybdenum and tungsten
dichalcogenides. Phys. Rev. B 86(11), 115409 (2012)
20. L. Li, Y. Yu, G.J. Ye, Q. Ge, X. Ou, H. Wu, D. Feng, X.H. Chen, Y. Zhang, Black phosphorus
field-effect transistors. Nat. Nanotechnol. 9(5), 372–377 (2014)
21. H. Liu, A.T. Neal, Z. Zhu, Z. Luo, X. Xu, D. Tománek, P.D. Ye, Phosphorene: an unexplored
2D semiconductor with a high hole mobility. ACS Nano 8(4), 4033–4041 (2014)
22. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Single-layer MoS 2
transistors. Nat. Nanotechnol. 6(3), 147–150 (2011)
23. H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D.W.H. Fam, A.I.Y. Tok, Q. Zhang, H. Zhang,
Fabrication of single-and multilayer MoS 2 film-based field-effect transistors for sensing NO
at room temperature. Small 8(1), 63–67 (2012)
24. K.F. Mak, K. He, J. Shan, T.F. Heinz, Control of valley polarization in monolayer MoS 2 by
optical helicity. Nat. Nanotechnol. 7(8), 494–498 (2012)
25. H.S. Lee, S.-W. Min, Y.-G. Chang, M.K. Park, T. Nam, H. Kim, J.H. Kim, S. Ryu, S. Im,
MoS 2 nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett.
12(7), 3695–3700 (2012)
26. S. Kim, A. Konar, W.-S. Hwang, J.H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J.-B. Yoo, J.-Y.
Choi, High-mobility and low-power thin-film transistors based on multilayer MoS 2 crystals.
Nat Commun 3, 1011 (2012)
27. C. Zhu, Z. Zeng, H. Li, F. Li, C. Fan, H. Zhang, Single-layer MoS 2 -based nanoprobes for
homogeneous detection of biomolecules. J. Am. Chem. Soc. 135(16), 5998–6001 (2013)
28. G.W. Shim, K. Yoo, S.-B. Seo, J. Shin, D.Y. Jung, I.-S. Kang, C.W. Ahn, B.J. Cho, S.-Y.
Choi, Large-area single-layer MoSe 2 and its van der Waals heterostructures. ACS Nano 8(7),
6655–6662 (2014)
29. C. Ataca, H. Sahin, S. Ciraci, Stable, single-layer MX 2 transition-metal oxides and
dichalcogenides in a honeycomb-like structure. J. Phys. Chem. C 116(16), 8983–8999 (2012)
30. Y. Zhou, D. Wu, Y. Gong, Z. Ma, Y. Huang, X. Zhang, C.Q. Sun, Base-hydration-resolved
hydrogen-bond networking dynamics: quantum point compression. J. Mol. Liq. 223, 1277–
1283 (2016)
31. J. Zi, H. Büscher, C. Falter, W. Ludwig, K. Zhang, X. Xie, Raman shifts in Si nanocrystals.
Appl. Phys. Lett. 69(2), 200–202 (1996)
32. X.X. Yang, J.W. Li, Z.F. Zhou, Y. Wang, L.W. Yang, W.T. Zheng, C.Q. Sun, Raman spectroscopic determination of the length, strength, compressibility, Debye temperature, elasticity,
and force constant of the C–C bond in graphene. Nanoscale 4(2), 502–10 (2012)
33. M. Fujii, Y. Kanzawa, S. Hayashi, K. Yamamoto, Raman scattering from acoustic phonons
confined in Si nanocrystals. Phys. Rev. B 54(12), R8373–R8376 (1996)
34. W. Cheng, S.F. Ren, Calculations on the size effects of Raman intensities of silicon quantum
dots. Phys. Rev. B 65(20), 205305 (2002)
35. C. Lee, H. Yan, L.E. Brus, T.F. Heinz, J. Hone, S. Ryu, Anomalous lattice vibrations of
single-and few-layer MoS 2 . ACS Nano 4(5), 2695–2700 (2010)
36. C.Q. Sun, Size dependence of nanostructures: Impact of bond order deficiency. Prog. Solid
State Chem. 35(1), 1–159 (2007)
37. X.J. Liu, M.L. Bo, X. Zhang, L. Li, Y.G. Nie, H. Tian, Y. Sun, S. Xu, Y. Wang, W. Zheng,
C.Q. Sun, Coordination-resolved electron spectrometrics. Chem. Rev. 115(14), 6746–6810
(2015)
439
15. S. Tongay, J. Zhou, C. Ataca, K. Lo, T.S. Matthews, J. Li, J.C. Grossman, J. Wu, Thermally
driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe 2 versus
MoS 2 . Nano Lett. 12(11), 5576–5580 (2012)
16. W. Zhao, R. Ribeiro, M. Toh, A. Carvalho, C. Kloc, A. Castro Neto, G. Eda, Origin of indirect
optical transitions in few-layer MoS 2 , WS 2 , and WSe 2 . Nano Lett. 13(11), 5627–5634 (2013)
17. V. Kaushik, D. Varandani, B.R. Mehta, Nanoscale mapping of layer-dependent surface potential and junction properties of CVD-Grown MoS 2 domains. J. Phys. Chem. C 119(34),
20136–20142 (2015)
18. A. Kuc, N. Zibouche, T. Heine, Influence of quantum confinement on the electronic structure
of the transition metal sulfide TS 2 . Phys. Rev. B 83(24), 245213 (2011)
19. A. Ramasubramaniam, Large excitonic effects in monolayers of molybdenum and tungsten
dichalcogenides. Phys. Rev. B 86(11), 115409 (2012)
20. L. Li, Y. Yu, G.J. Ye, Q. Ge, X. Ou, H. Wu, D. Feng, X.H. Chen, Y. Zhang, Black phosphorus
field-effect transistors. Nat. Nanotechnol. 9(5), 372–377 (2014)
21. H. Liu, A.T. Neal, Z. Zhu, Z. Luo, X. Xu, D. Tománek, P.D. Ye, Phosphorene: an unexplored
2D semiconductor with a high hole mobility. ACS Nano 8(4), 4033–4041 (2014)
22. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Single-layer MoS 2
transistors. Nat. Nanotechnol. 6(3), 147–150 (2011)
23. H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D.W.H. Fam, A.I.Y. Tok, Q. Zhang, H. Zhang,
Fabrication of single-and multilayer MoS 2 film-based field-effect transistors for sensing NO
at room temperature. Small 8(1), 63–67 (2012)
24. K.F. Mak, K. He, J. Shan, T.F. Heinz, Control of valley polarization in monolayer MoS 2 by
optical helicity. Nat. Nanotechnol. 7(8), 494–498 (2012)
25. H.S. Lee, S.-W. Min, Y.-G. Chang, M.K. Park, T. Nam, H. Kim, J.H. Kim, S. Ryu, S. Im,
MoS 2 nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett.
12(7), 3695–3700 (2012)
26. S. Kim, A. Konar, W.-S. Hwang, J.H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J.-B. Yoo, J.-Y.
Choi, High-mobility and low-power thin-film transistors based on multilayer MoS 2 crystals.
Nat Commun 3, 1011 (2012)
27. C. Zhu, Z. Zeng, H. Li, F. Li, C. Fan, H. Zhang, Single-layer MoS 2 -based nanoprobes for
homogeneous detection of biomolecules. J. Am. Chem. Soc. 135(16), 5998–6001 (2013)
28. G.W. Shim, K. Yoo, S.-B. Seo, J. Shin, D.Y. Jung, I.-S. Kang, C.W. Ahn, B.J. Cho, S.-Y.
Choi, Large-area single-layer MoSe 2 and its van der Waals heterostructures. ACS Nano 8(7),
6655–6662 (2014)
29. C. Ataca, H. Sahin, S. Ciraci, Stable, single-layer MX 2 transition-metal oxides and
dichalcogenides in a honeycomb-like structure. J. Phys. Chem. C 116(16), 8983–8999 (2012)
30. Y. Zhou, D. Wu, Y. Gong, Z. Ma, Y. Huang, X. Zhang, C.Q. Sun, Base-hydration-resolved
hydrogen-bond networking dynamics: quantum point compression. J. Mol. Liq. 223, 1277–
1283 (2016)
31. J. Zi, H. Büscher, C. Falter, W. Ludwig, K. Zhang, X. Xie, Raman shifts in Si nanocrystals.
Appl. Phys. Lett. 69(2), 200–202 (1996)
32. X.X. Yang, J.W. Li, Z.F. Zhou, Y. Wang, L.W. Yang, W.T. Zheng, C.Q. Sun, Raman spectroscopic determination of the length, strength, compressibility, Debye temperature, elasticity,
and force constant of the C–C bond in graphene. Nanoscale 4(2), 502–10 (2012)
33. M. Fujii, Y. Kanzawa, S. Hayashi, K. Yamamoto, Raman scattering from acoustic phonons
confined in Si nanocrystals. Phys. Rev. B 54(12), R8373–R8376 (1996)
34. W. Cheng, S.F. Ren, Calculations on the size effects of Raman intensities of silicon quantum
dots. Phys. Rev. B 65(20), 205305 (2002)
35. C. Lee, H. Yan, L.E. Brus, T.F. Heinz, J. Hone, S. Ryu, Anomalous lattice vibrations of
single-and few-layer MoS 2 . ACS Nano 4(5), 2695–2700 (2010)
36. C.Q. Sun, Size dependence of nanostructures: Impact of bond order deficiency. Prog. Solid
State Chem. 35(1), 1–159 (2007)
37. X.J. Liu, M.L. Bo, X. Zhang, L. Li, Y.G. Nie, H. Tian, Y. Sun, S. Xu, Y. Wang, W. Zheng,
C.Q. Sun, Coordination-resolved electron spectrometrics. Chem. Rev. 115(14), 6746–6810
(2015)