5 Solid State Detectors
197
Since 1980 several new detector concepts were proposed, realised and used for
a variety of measurement tasks. Outstanding examples are drift detectors, fully
depleted CCDs, DEPFETs, MAPSs 3-D sensors, APDs and SiPMs. The different
devices have their advantages and shortcomings, but offer high-performance solutions for most measurement tasks. In recent years radiation damage for the use
of silicon sensors at high flux or high luminosity colliders has become more and
more of a concern. Whereas radiation damage by X-rays can be controlled by a
proper sensor design, the question up to which fluence of high-energy radiation
silicon detectors can be used is a field of intense research. Unfortunately other
sensor materials, like crystalline diamond or GaAs seem not to be a solution.
Defect engineering, by doping crystals with different impurities has resulted in
some improvements. However, a breakthrough for high fluences could not be
demonstrated. Therefore the only approach appears to optimise the sensor layout for
radiation tolerance. The recipe followed are high fields and low charge collection
distances. How far intrinsic amplification can help remains an open question. For
the design optimisation, complex TCAD (Technology Computer-Aided Design)
simulations are performed. In spite of some first successes, a major progress is
still required. As far as the electronics, which is exposed to the same fluences, is
concerned, the sub-micron technology with nano-meter dielectric layers resulted in
a big step in radiation tolerance.
For the future there is the strong hope that detectors can be fabricated which
achieve the challenging performance parameters in the high radiation fields of the
HL-LHC and future high-luminosity colliders. The field of solid state detectors
will also profit very much from the ongoing industrial R&D efforts, in particular
of 3-D integration technology and nano-electronics. Last but not least I very much
hope that, like in the past, radically new ideas will come up and expand further the
applications of solid state detectors.
References
1. E. Gatti, P. Rehak: Semiconductor Drift Chamber - An Application of a Novel Charge Transport
Scheme, Nucl. Instrum. Meth. 225 (1984) 608-614; E. Gatti et al.: Silicon Drift Chambers -
First results and optimum processing of signals, Nucl. Instrum. Meth. 226 (1984) 129-141; E.
Gatti et al.: Semiconductor Drift Chambers, IEEE Trans. Nucl. Sci. 32 (1985) 1204-1208.
2. L. Strüder et al.: The MPI/AIT X-ray imager (MAXI) - high speed pn-CCDs for X-ray detection,
Nucl. Instrum. Meth. A 288 (1990) 227-235; L. Strüder et al.: First results with the pn-CCD
detector system for the XMM satellite mission, Nucl. Instrum. Meth. A 326 (1993) 129-135;
L. Strüder et al.: A 36 cm 2 large monolythic pn-charge coupled device X-ray detector for the
European XMM satellite mission, Rev. Sci. Instrum. 68 (1997) 4271-4274.
3. J. Kemmer, G. Lutz: New semiconductor detector concepts, Nucl. Instrum. Meth. A 253 (1987)
356-377.
4. J. Zhang et al.: Study of radiation damage induced by 12 keV X-rays in MOS structures built
on high-resistivity n-type silicon, Journal of Synchrotron Radiation 19 (2012) 340-376.
5. T. Poehlsen, et al.: Charge losses in segmented silicon sensors at the Si-SiO2 interface, Nucl.
Instrum. Meth. A 700 (2013) 22-39.
197
Since 1980 several new detector concepts were proposed, realised and used for
a variety of measurement tasks. Outstanding examples are drift detectors, fully
depleted CCDs, DEPFETs, MAPSs 3-D sensors, APDs and SiPMs. The different
devices have their advantages and shortcomings, but offer high-performance solutions for most measurement tasks. In recent years radiation damage for the use
of silicon sensors at high flux or high luminosity colliders has become more and
more of a concern. Whereas radiation damage by X-rays can be controlled by a
proper sensor design, the question up to which fluence of high-energy radiation
silicon detectors can be used is a field of intense research. Unfortunately other
sensor materials, like crystalline diamond or GaAs seem not to be a solution.
Defect engineering, by doping crystals with different impurities has resulted in
some improvements. However, a breakthrough for high fluences could not be
demonstrated. Therefore the only approach appears to optimise the sensor layout for
radiation tolerance. The recipe followed are high fields and low charge collection
distances. How far intrinsic amplification can help remains an open question. For
the design optimisation, complex TCAD (Technology Computer-Aided Design)
simulations are performed. In spite of some first successes, a major progress is
still required. As far as the electronics, which is exposed to the same fluences, is
concerned, the sub-micron technology with nano-meter dielectric layers resulted in
a big step in radiation tolerance.
For the future there is the strong hope that detectors can be fabricated which
achieve the challenging performance parameters in the high radiation fields of the
HL-LHC and future high-luminosity colliders. The field of solid state detectors
will also profit very much from the ongoing industrial R&D efforts, in particular
of 3-D integration technology and nano-electronics. Last but not least I very much
hope that, like in the past, radically new ideas will come up and expand further the
applications of solid state detectors.
References
1. E. Gatti, P. Rehak: Semiconductor Drift Chamber - An Application of a Novel Charge Transport
Scheme, Nucl. Instrum. Meth. 225 (1984) 608-614; E. Gatti et al.: Silicon Drift Chambers -
First results and optimum processing of signals, Nucl. Instrum. Meth. 226 (1984) 129-141; E.
Gatti et al.: Semiconductor Drift Chambers, IEEE Trans. Nucl. Sci. 32 (1985) 1204-1208.
2. L. Strüder et al.: The MPI/AIT X-ray imager (MAXI) - high speed pn-CCDs for X-ray detection,
Nucl. Instrum. Meth. A 288 (1990) 227-235; L. Strüder et al.: First results with the pn-CCD
detector system for the XMM satellite mission, Nucl. Instrum. Meth. A 326 (1993) 129-135;
L. Strüder et al.: A 36 cm 2 large monolythic pn-charge coupled device X-ray detector for the
European XMM satellite mission, Rev. Sci. Instrum. 68 (1997) 4271-4274.
3. J. Kemmer, G. Lutz: New semiconductor detector concepts, Nucl. Instrum. Meth. A 253 (1987)
356-377.
4. J. Zhang et al.: Study of radiation damage induced by 12 keV X-rays in MOS structures built
on high-resistivity n-type silicon, Journal of Synchrotron Radiation 19 (2012) 340-376.
5. T. Poehlsen, et al.: Charge losses in segmented silicon sensors at the Si-SiO2 interface, Nucl.
Instrum. Meth. A 700 (2013) 22-39.