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G. Lutz and R. Klanner
Fig. 5.29 Working principle of a three-phase MOS CCD: layout (a); charge-transfer (b): Every
third gate electrode is connected to the same potential (φ 1 , φ 2 , φ 3 ) so that a periodic potential
appears below the gates at the Si-SiO 2 interface. Electrons are collected in the maxima of the
potential distribution. They can be shifted towards the readout anode by changing the potentials,
as shown in (b)
Fig. 5.30 Matrix CCD and the principle of the charge-transfer sequence. Charge is shifted in the
vertical direction with all pixels of the matrix in parallel, the lowest row being transferred into a
horizontal linear CCD. This horizontal CCD is then read out through a single output node
G. Lutz and R. Klanner
Fig. 5.29 Working principle of a three-phase MOS CCD: layout (a); charge-transfer (b): Every
third gate electrode is connected to the same potential (φ 1 , φ 2 , φ 3 ) so that a periodic potential
appears below the gates at the Si-SiO 2 interface. Electrons are collected in the maxima of the
potential distribution. They can be shifted towards the readout anode by changing the potentials,
as shown in (b)
Fig. 5.30 Matrix CCD and the principle of the charge-transfer sequence. Charge is shifted in the
vertical direction with all pixels of the matrix in parallel, the lowest row being transferred into a
horizontal linear CCD. This horizontal CCD is then read out through a single output node